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Solid phase epitaxy in uniaxially stressed (001) Si

Appl. Phys. Lett. 91, 172103 (2007); doi:10.1063/1.2801518

Published 22 October 2007

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N. G. Rudawski and K. S. Jones
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400, USA

R. Gwilliam
Nodus Accelerator Laboratory, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
The effect of [110] uniaxial stresses up to 1.5  GPa on defect nucleation during solid phase epitaxy of amorphous (001) Si created via ion implantation was examined. The solid phase epitaxial regrowth velocity was slowed in compression. However, in tension, the velocity was unaffected. Both compression and tension resulted in an increase in regrowth defects compared to the stress-free case. The defects in compression appear to arise from roughening of the crystallizing interface whereas in tension it is proposed that reorientation of crystallites near the initial amorphous/crystalline interface is responsible for defect formation. ©2007 American Institute of Physics
History: Received 24 July 2007; accepted 2 October 2007; published 22 October 2007
Permalink: http://link.aip.org/link/?APPLAB/91/172103/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.Gc
    Amorphous semiconductors: fabrication, treatment testing and analysis
  • 81.05.Cy
    Elemental semiconductors: fabrication, treatment, testing and analysis
  • 81.15.Np
    Solid phase epitaxy; thin film growth from solid phases
  • 68.55.Ln
    Thin film defects and impurities including doping, implantation, distribution, concentration, etc
  • 68.55.Jk
    Thin film structure and morphology; thickness; crystalline orientation and texture
  • 68.55.Ac
    Thin film nucleation and growth: microscopic aspects
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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