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Single-electron quantum dot in Si/SiGe with integrated charge sensing

Appl. Phys. Lett. 91, 213103 (2007); doi:10.1063/1.2816331

Published 20 November 2007

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Single-electron occupation is an essential component to the measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge sensing from an integrated quantum point contact, and this charge sensing is used to confirm single-electron occupancy in the quantum dot. ©2007 American Institute of Physics
History: Received 18 October 2007; accepted 1 November 2007; published 20 November 2007
Permalink: http://link.aip.org/link/?APPLAB/91/213103/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Kv
    Quantum dots (electronic transport)
  • 73.40.Lq
    Electrical properties of other semiconductor-to-semiconductor contacts, p–n junctions, and heterojunctions excluding III–V semiconductor-to-semiconductor
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (28)
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  1. L. P. Kouwenhoven, T. H. Oosterkamp, M. W. S. Danoesastro, M. Eto, D. G. Austing, T. Honda, and S. Tarucha, Science 278, 1788 (1997).
  2. L. P. Kouwenhoven, C. M. Marcus, P. L. McEuen, S. Tarucha, R. M. Westervelt, and N. S. Wingreen, in Mesoscopic Electron Transport, edited by L. L. Sohn, L. P. Kouwenhoven, and G. Schön (Kluwer, Dordrecht, 1997), Vol. 345, p. 105.
  3. D. Loss and D. P. DiVincenzo, Phys. Rev. A 57, 120 (1998).
  4. B. E. Kane, Nature (London) 393, 133 (1998).
  5. M. Friesen, P. Rugheimer, D. E. Savage, M. G. Lagally, D. W. van der Weide, R. Joynt, and M. A. Eriksson, Phys. Rev. B 67, 121301 (2003).
  6. X. D. Hu, B. Koiller, and S. D. Sarma, Phys. Rev. B 71, 235332 (2005).
  7. R. de Sousa and S. Das Sarma, Phys. Rev. B 68, 115322 (2003).
  8. C. Tahan, M. Friesen, and R. Joynt, Phys. Rev. B 66, 035314 (2002).
  9. L. P. Rokhinson, L. J. Guo, S. Y. Chou, and D. C. Tsui, Phys. Rev. B 63, 035321 (2001).
  10. L. J. Klein, K. A. Slinker, J. L. Truitt, S. Goswami, K. L. M. Lewis, S. N. Coppersmith, D. W. van der Weide, M. Friesen, R. H. Blick, D. E. Savage, M. G. Lagally, C. Tahan, R. Joynt, M. A. Eriksson, J. O. Chu, J. A. Ott, and P. M. Mooney, Appl. Phys. Lett. 84, 4047 (2004).
  11. M. R. Sakr, H. W. Jiang, E. Yablonovitch, and E. T. Croke, Appl. Phys. Lett. 87, 223104 (2005).
  12. K. A. Slinker, K. L. M. Lewis, C. C. Haselby, S. Goswami, L. J. Klein, J. O. Chu, S. N. Coppersmith, R. Joynt, R. H. Blick, M. Friesen, and M. A. Eriksson, New J. Phys. 7, 246 (2005).
  13. L. J. Klein, K. L. M. Lewis, K. A. Slinker, S. Goswami, D. W. van der Weide, R. H. Blick, P. M. Mooney, J. O. Chu, S. N. Coppersmith, M. Friesen, and M. A. Eriksson, J. Appl. Phys. 99, 023509 (2006).
  14. T. Berer, D. Pachinger, G. Pillwein, M. Muhlberger, H. Lichtenberger, G. Brunthaler, and F. Schaffler, Appl. Phys. Lett. 88, 162112 (2006).
  15. L. J. Klein, D. E. Savage, and M. A. Eriksson, Appl. Phys. Lett. 90, 033103 (2007).
  16. H. W. Liu, T. Fujisawa, Y. Ono, H. Inokawa, A. Fujiwara, K. Takashina, and Y. Hirayama (http://arxiv.org/abs/0707.3513).
  17. J. Gorman, D. G. Hasko, and D. A. Williams, Phys. Rev. Lett. 95, 090502 (2005).
  18. S. J. Angus, A. J. Ferguson, A. S. Dzurak, and R. G. Clark, Nano Lett. 7, 2051 (2007).
  19. M. Field, C. G. Smith, M. Pepper, D. A. Ritchie, J. E. F. Frost, G. A. C. Jones, and D. G. Hasko, Phys. Rev. Lett. 70, 1311 (1993).
  20. E. Buks, R. Schuster, M. Heiblum, D. Mahalu, and V. Umansky, Nature (London) 391, 871 (1998).
  21. J. M. Elzerman, R. Hanson, J. S. Greidanus, L. H. W. van Beveren, S. De Franceschi, L. M. K. Vandersypen, S. Tarucha, and L. P. Kouwenhoven, Phys. Rev. B 67, 161308 (2003).
  22. T. Fujisawa, T. Hayashi, R. Tomita, and Y. Hirayama, Science 312, 1634 (2006).
  23. Y. Hu, H. O. H. Churchill, D. J. Reilly, J. Xiang, C. M. Lieber, and C. M. Marcus, Nat. Nanotechnol. 2, 622 (2007).
  24. J. M. Elzerman, R. Hanson, L. H. W. van Beveren, B. Witkamp, L. M. K. Vandersypen, and L. P. Kouwenhoven, Nature (London) 430, 431 (2004).
  25. J. R. Petta, A. C. Johnson, J. M. Taylor, E. A. Laird, A. Yacoby, M. D. Lukin, C. M. Marcus, M. P. Hanson, and A. C. Gossard, Science 309, 2180 (2005).
  26. F. H. L. Koppens, C. Buizert, K. J. Tielrooij, I. T. Vink, K. C. Nowack, T. Meunier, L. P. Kouwenhoven, and L. M. K. Vandersypen, Nature (London) 442, 766 (2006).
  27. R. Hanson, L. P. Kouwenhoven, J. R. Petta, S. Tarucha, and L. M. K. Vandersypen, Rev. Mod. Phys. 79, 1217 (2007).
  28. N. Shaji, C. B. Simmons, M. Thalakulam, L. J. Klein, H. Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Coppersmith, and M. A. Eriksson, e-print arXiv:0708.0794.

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