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Mechanism for generation of the phonon-energy-coupling enhancement effect for ultrathin oxides on silicon

Appl. Phys. Lett. 91, 223513 (2007); doi:10.1063/1.2820383

Published 30 November 2007

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Zhi Chen
Department of Electrical and Computer Engineering and Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, Kentucky 40506, USA
Large leakage-current reduction of SiO2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing (RTP) of SiO2 at T>Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T<Tc in pure N2 does not change the oxide structure. After introducing a little amount of oxygen during RTP, the destructive structure can be converted to a constructive one by repairing the defects created during RTP at T>Tc. This leads to reduced leakage current. ©2007 American Institute of Physics
History: Received 13 September 2007; accepted 10 November 2007; published 30 November 2007
Permalink: http://link.aip.org/link/?APPLAB/91/223513/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.65.-b
    Surface treatments
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (5)
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  1. Z. Chen, J. Guo, and C. B. Samantaray, 2005 International Semiconductor Device Research Symposium Proceedings (IEEE, Bethesda, MD, 2005), p. 240.
  2. Z. Chen, J. Guo, and F. Yang, Appl. Phys. Lett. 88, 082905 (2006).
  3. Z. Chen and J. Guo, Solid-State Electron. 50, 1004 (2006).
  4. C. B. Samantaray and Z. Chen, Appl. Phys. Lett. 89, 162903 (2006).
  5. P. Ong and Z. Chen, Appl. Phys. Lett. 90, 113516 (2007).

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