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Substrate removal for high quantum efficiency back side illuminated type-II InAs/GaSb photodetectors

Appl. Phys. Lett. 91, 231106 (2007); doi:10.1063/1.2821834

Published 5 December 2007

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Pierre-Yves Delaunay, Binh Minh Nguyen, Darin Hofman, and Manijeh Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
A substrate removal technique using an InAsSb etch stop layer improves by a factor of 2 the quantum efficiency of back side illuminated type-II InAs/GaSb superlattice photodetectors. After etching of the GaSb substrate with a CrO3 based solution, the quantum efficiency of the diodes presents Fabry-Pérot oscillations averaging at 56%. Due to the confinement of the infrared light inside the devices, the quantum efficiency for certain devices reaches 75% at 8.5  µm. The implementation of this new technique to a focal plane array resulted in a decrease of the integration time from 0.23  to  0.08  ms. ©2007 American Institute of Physics
History: Received 16 October 2007; accepted 15 November 2007; published 5 December 2007
Permalink: http://link.aip.org/link/?APPLAB/91/231106/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.65.Cf
    Surface cleaning, etching, patterning
  • 68.47.Fg
    Semiconductor surfaces
  • 81.05.Ea
    III–V semiconductors: fabrication, treatment, testing and analysis
  • 85.60.Gz
    Photodetectors including infrared and CCD detectors
  • 68.65.Cd
    Superlattices (structure and nonelectronic properties)
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (11)
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