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Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN/GaN heterostructure transistors
The origin of hysteresis in capacitance-voltage (C-V) characteristics was studied for Schottky diodes prepared on AlGaN/GaN transistor structures with GaN (Fe) buffers. The application of reverse bias...
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Microstructure of NbN epitaxial ultrathin films grown on A-, M-, and R-plane sapphire
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Conduction band offset at the InN/GaN heterojunction

Appl. Phys. Lett. 91, 232117 (2007); doi:10.1063/1.2821378

Published 7 December 2007

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Kejia (Albert) Wang, Chuanxin Lian, Ning Su, and Debdeep Jena
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA

John Timler
System Creations, 3838 N. Causeway Blvd., Suite 3070 Metairie, Los Angeles 70002, USA
The conduction-band offset between GaN and InN is experimentally determined. InN/n-type GaN isotype heterojunctions grown by molecular beam epitaxy are observed to exhibit Schottky-junction like behavior based on rectifying vertical current flow. From capacitance-voltage measurements on the heterojunction, the Schottky barrier height is found to be ~0.94  eV. The photocurrent spectroscopy measurement by backside illumination reveals an energy barrier height of 0.95  eV across the heterojunction, consistent with the capacitance measurement. By combining electrical transport, capacitance-voltage, and photocurrent spectroscopy measurement results, the conduction band offset between InN and GaN is estimated to be DeltaEC=1.68±0.1  eV. ©2007 American Institute of Physics
History: Received 27 September 2007; accepted 14 November 2007; published 7 December 2007
Permalink: http://link.aip.org/link/?APPLAB/91/232117/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 72.80.Ey
    Electrical conductivity of III–V and II–VI semiconductors
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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