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Spin-dependent scattering off neutral antimony donors in 28Si field-effect transistors

Appl. Phys. Lett. 91, 242106 (2007); doi:10.1063/1.2817966

Published 12 December 2007 | See: Publisher's Note

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C. C. Lo and J. Bokor
Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA

T. Schenkel
Accelerator and Fusion Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

J. He, A. M. Tyryshkin, and S. A. Lyon
Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
We report measurements of spin-dependent scattering of conduction electrons by neutral donors in accumulation-mode field-effect transistors formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering for the readout of donor spin states in silicon based quantum computers. ©2007 American Institute of Physics
History: Received 26 October 2007; accepted 6 November 2007; published 12 December 2007; publisher error corrected 2 April 2008
Permalink: http://link.aip.org/link/?APPLAB/91/242106/1
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ERRATUM

  1. Publisher's Note: “Spin-dependent scattering off neutral antimony donors in 28Si field-effect transistors” [Appl. Phys. Lett. 91, 242106 (2007)]
    C. C. Lo et al.
    Appl. Phys. Lett. 92, 109908 (2008)

KEYWORDS and PACS

Keywords
PACS
  • 72.25.-b
    Spin polarized transport
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.75.Hh
    Spin polarized field effect transistors
  • YEAR: 2007

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ISSN:
0003-6951 (print)   1077-3118 (online)
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