Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
Search:
   
 
 
 
Previous Article
106  years extrapolated hole storage time in GaSb/AlAs quantum dots
A thermal activation energy of 710  meV for hole emission from InAs/GaAs quantum dots (QDs) across an Al0.9Ga0.1As barrier is determined by using time-resolved capacitance spectroscopy. A ho...
Next Article
Systematic study on p-type doping control of InN with different Mg concentrations in both In and N polarities
p-type conductivity control of In- and N-polar InN layers grown on GaN templates with different Mg concentrations ([Mg]) was systematically investigated by using electrolyte-based capacitance-voltage ...

Percolative effects on noise in pentacene transistors

Appl. Phys. Lett. 91, 242110 (2007); doi:10.1063/1.2823577

Published 14 December 2007

You are not logged in to this journal. Log in

B. R. Conrad, W. G. Cullen, W. Yan, and E. D. Williams
Department of Physics, University of Maryland, College Park, College Park, Maryland 20742, USA
Noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral noise form is 1/f, and the noise parameter varies inversely with gate voltage, confirming that the noise is due to mobility fluctuations, even in the thinnest films. Hooge's parameter varies as an inverse power law with conductivity for all film thicknesses. The magnitude and transport characteristics of the spectral noise are well explained in terms of percolative effects arising from the grain boundary structure. ©2007 American Institute of Physics
History: Received 13 October 2007; accepted 19 November 2007; published 14 December 2007
Permalink: http://link.aip.org/link/?APPLAB/91/242110/1
BUY THIS ARTICLE   (US$24)
Download HTML Download Sectioned HTML Download PDF (315 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2007

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (30)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. F. N. Hooge, Phys. Lett. A 29, 139 (1969).
  2. F. N. Hooge, IEEE Trans. Electron Devices 41, 1926 (1994).
  3. O. Marinov, M. J. Deen, and B. Iniguez, IEE Proc.: Circuits Devices Syst. 152, 189 (2005).
  4. J. Planes and A. Francois, Phys. Rev. B 70, 184203 (2004).
  5. G. Ferrari, D. Natali, M. Sampietro, F. P. Wenzl, U. Scherf, C. Schmitt, R. Guntner, and G. Leising, Org. Electron. 3, 33 (2002).
  6. M. Sampietro, G. Ferrari, D. Natali, U. Scherf, K. O. Annan, F. P. Wenzl, and G. Leising, Appl. Phys. Lett. 78, 3262 (2001).
  7. P. V. Necliudov, S. L. Rumyantsev, M. S. Shur, D. J. Gundlach, and T. N. Jackson, J. Appl. Phys. 88, 5395 (2000).
  8. L. K. J. Vandamme, R. Feyaerts, G. Trefan, and C. Detcheverry, J. Appl. Phys. 91, 719 (2002).
  9. S. Martin, A. Dodabalapur, Z. Bao, B. Crone, H. E. Katz, W. Li, A. Passner, and J. A. Rogers, J. Appl. Phys. 87, 3381 (2000).
  10. L. Ke, X. Y. Zhao, R. S. Kumar, and S. J. Chua, IEEE Electron Device Lett. 27, 555 (2006).
  11. R. Ruiz, A. Papadimitratos, A. C. Mayer, and G. G. Malliaras, Adv. Mater. (Weinheim, Ger.) 17, 1795 (2005).
  12. G. Horowitz, J. Mater. Res. 19, 1946 (2004).
  13. A. C. Mayer, R. Ruiz, R. L. Headrick, A. Kazimirov, and G. G. Malliaras, Org. Electron. 5, 257 (2004).
  14. F. Heringdorf, M. C. Reuter, and R. M. Tromp, Nature (London) 412, 517 (2001).
  15. R. Ruiz, D. Choudhary, B. Nickel, T. Toccoli, K. C. Chang, A. C. Mayer, P. Clancy, J. M. Blakely, R. L. Headrick, S. Iannotta, and G. G. Malliaras, Chem. Mater. 16, 4497 (2004).
  16. D. Guo, T. Miyadera, S. Ikeda, T. Shimada, and K. Saiki, J. Appl. Phys. 102, 023706 (2007).
  17. M. J. Deen, O. Marinov, J. F. Yu, S. Holdcroft, and W. Woods, IEEE Trans. Electron Devices 48, 1688 (2001).
  18. S. Pratontep, M. Brinkmann, F. Nuesch, and L. Zuppiroli, Synth. Met. 146, 387 (2004).
  19. S. Pratontep, M. Brinkmann, F. Nuesch, and L. Zuppiroli, Phys. Rev. B 69, 165201 (2004).
  20. L. K. J. Vandamme and G. Trefan, IEE Proc.: Circuits Devices Syst. 149, 3 (2002).
  21. M. Ishigami, J. H. Chen, E. D. Williams, D. Tobias, Y. F. Chen, and M. S. Fuhrer, Appl. Phys. Lett. 88, 203116 (2006).
  22. J. Berntgen, K. Heime, W. Daumann, U. Auer, F. J. Tegude, and A. Matulionis, IEEE Trans. Electron Devices 46, 194 (1999).
  23. L. K. J. Vandamme, in Seventh International Conference on Noise in Physical Systems, edited by M. Savelli, G. Lecoy, and J. P. Nougier (Elsevier, Montpellier, France, 1983), p. 183.
  24. C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev. 45, 11 (2001).
  25. S. Kogan, Electronic Noise and Fluctuations in Solids (Cambridge University Press, New York, 1996).
  26. E. P. Vandamme and L. K. J. Vandamme, Microelectron. Reliab. 40, 1847 (2000).
  27. M. Mottaghi and G. Horowitz, Org. Electron. 7, 528 (2006).
  28. O. Marinov, M. J. Deen, J. Yu, G. Vamvounis, S. Holdcroft, and W. Woods, IEE Proc.: Circuits Devices Syst. 151, 466 (2004).
  29. V. C. Sundar, J. Zaumseil, V. Podzorov, E. Menard, R. L. Willett, T. Someya, M. E. Gershenson, and J. A. Rogers, Science 303, 1644 (2004).
  30. J. Y. Lee, S. Roth, and Y. W. Park, Appl. Phys. Lett. 88, 252106 (2006).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics