Enzymatic glucose detection using ZnO nanorods on the gate region of AlGaN/GaN high electron mobility transistors
ZnO nanorod-gated AlGaN/GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature h...
ZnO nanorod-gated AlGaN/GaN high electron mobility transistors (HEMTs) are demonstrated for the detection of glucose. A ZnO nanorod array was selectively grown on the gate area using low temperature h...
Experimental observation of isotropic in-plane spin splitting in GaN/AlGaN two-dimensional electron gas
The circular photogalvanic effect (CPGE) was used to study the in-plane-orientation dependent spin splitting in the C(0001)-oriented GaN/AlGaN two-dimensional electron gas (2DEG). The CPGE current ind...
The circular photogalvanic effect (CPGE) was used to study the in-plane-orientation dependent spin splitting in the C(0001)-oriented GaN/AlGaN two-dimensional electron gas (2DEG). The CPGE current ind...
Hot phonon effect on electron velocity saturation in GaN: A second look
Appl. Phys. Lett. 91, 252104 (2007); doi:10.1063/1.2824872
Published 17 December 2007
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A theoretical model is developed for electron velocity saturation in high power GaN transistors. It is shown that electron velocity at high electric fields is reduced due to heating of electron gas since the high density of nonequilibrium LO phonons cannot efficiently transfer heat to the lattice. However, the resulting degradation of electron velocity is found to be weaker than previously reported. The results are compared with experimental data, and the ways to improve the efficiency of cooling the electron gas to increase the drift velocity are discussed.
©2007 American Institute of Physics
| History: | Received 1 October 2007; accepted 26 November 2007; published 17 December 2007 |
| Permalink: |
http://link.aip.org/link/?APPLAB/91/252104/1 |
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BibSonomy
KEYWORDS and PACS
electron gas,
gallium compounds,
heat transfer,
high electron mobility transistors,
III-V semiconductors,
phonons,
power transistors,
wide band gap semiconductors
- 85.30.Tv
Semiconductor field effect devices - 85.30.De
Semiconductor-device characterization, design, and modeling - 81.05.Ea
III–V semiconductors: fabrication, treatment, testing and analysis - 73.61.Ey
Electrical properties of III–V semiconductors (thin films) - 72.20.Fr
Low-field transport and mobility; piezoresistance (semiconductors/insulators) - YEAR: 2007
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (8)
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