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Tunneling spectroscopy of ultrathin insulating films: CuN on Cu(100)

Appl. Phys. Lett. 91, 253106 (2007); doi:10.1063/1.2825595

Published 18 December 2007

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C. D. Ruggiero, T. Choi, and J. A. Gupta
Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
Scanning tunneling microscopy is used to characterize the electronic structure of 1 ML films of CuN on Cu(100). We find that CuN acts as an insulator with a band gap that exceeds 4  eV. Measurements of the tunneling barrier height and image potential states indicate that the CuN work function is ~0.9  eV larger than bare Cu. This suggests a significant surface dipole, consistent with charge transfer predicted by theory. Our results indicate that CuN films are useful for controlling the electronic coupling between adsorbates and surface electron density on the nanometer scale. ©2007 American Institute of Physics
History: Received 31 October 2007; accepted 28 November 2007; published 18 December 2007
Permalink: http://link.aip.org/link/?APPLAB/91/253106/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.30.+y
    Surface double layers, Schottky barriers, and work functions
  • 71.20.Ps
    Electronic structure of other crystalline inorganic compounds excluding metals, alloys, semiconductors and fullerenes
  • 68.37.Ef
    Scanning tunneling microscopy of surfaces, interfaces and thin films including chemistry induced with STM
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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