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Electrical spin injection into the InAs/GaAs wetting layer

Appl. Phys. Lett. 91, 262504 (2007); doi:10.1063/1.2827585

Published 26 December 2007

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C. H. Li, G. Kioseoglou, A. T. Hanbicki, R. Goswami, C. S. Hellberg, and B. T. Jonker
Naval Research Laboratory, Washington, DC 20375, USA

M. Yasar and A. Petrou
University at Buffalo, Buffalo, New York 14260, USA
We have used transport measurements, transmission electron microscopy, and polarization dependent photo- and electroluminescence to characterize the InAs/GaAs(001) wetting layer (WL) system. Transport data confirm formation of a two-dimensional electron gas in modulation-doped structures. The optical pumping of the WL in an undoped structure provides a ratio of radiative to spin lifetime (taur/taus)~1, which is constant over the measurement range of 10–100  K. We demonstrate efficient spin injection from an Fe Schottky tunnel contact into the WL, and achieve an electron spin polarization of ~55% from 5  to  50  K, which decreases monotonically with increasing temperature. ©2007 American Institute of Physics
History: Received 21 September 2007; accepted 3 December 2007; published 26 December 2007
Permalink: http://link.aip.org/link/?APPLAB/91/262504/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Ns
    Electrical properties of metal–nonmetal contacts
  • 72.25.Dc
    Spin polarized transport in semiconductors
  • 72.25.Mk
    Spin transport through interfaces
  • 78.67.-n
    Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
  • 78.60.Fi
    Electroluminescence (condensed matter)
  • 78.55.Cr
    Photoluminescence in III–V semiconductors
  • YEAR: 2007

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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