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All-optical delay line using semiconductor cavity solitons

Appl. Phys. Lett. 92, 011101 (2008); doi:10.1063/1.2828458

Published 2 January 2008 | See: Publisher's Note

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F. Pedaci, S. Barland, E. Caboche, P. Genevet, M. Giudici, and J. R. Tredicce
Institut Non-linéaire de Nice, Université de Nice Sophia, Antipolis—Centre Nationale de la Recherche Scientifique, 1361 route des Lucioles, 06560 Valbonne, France

T. Ackemann, A. J. Scroggie, W. J. Firth, and G.-L. Oppo
SUPA, Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow G4 ONG, Scotland, United Kingdom

G. Tissoni
INFM-CNR and CNISM, Dipartimento di Matematica e Fisica, Università dell'Insubria, Via Valleggio 11, 22100 Como, Italy

R. Jäger
ULM Photonics, Lise Meitner Str. 13, 89081 Ulm, Germany
An all-optical delay line based on the lateral drift of cavity solitons in semiconductor microresonators is proposed and experimentally demonstrated. The functionalities of the device proposed as well as its performance is analyzed and compared with recent alternative methods based on the decrease of group velocity in the vicinity of resonances. We show that the current limitations can be overcome using broader devices with tailored material responses. ©2008 American Institute of Physics
History: Received 12 July 2007; accepted 4 October 2007; published 2 January 2008; publisher error corrected 17 June 2009
Permalink: http://link.aip.org/link/?APPLAB/92/011101/1
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ERRATUM

  1. Publisher's Note: “All-optical delay line using semiconductor cavity solitons” [Appl. Phys. Lett. 92, 011101 (2008)]
    F. Pedaci et al.
    Appl. Phys. Lett. 94, 269902 (2009)

Supplemental Material

KEYWORDS and PACS

Keywords
PACS
  • 42.65.Tg
    Optical solitons; nonlinear guided waves
  • 85.85.+j
    Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
  • 42.79.-e
    Optical elements, devices, and systems
  • YEAR: 2008

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