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Evidence of hot electrons generated from an AlN/GaN high electron mobility transistor

Appl. Phys. Lett. 92, 013513 (2008); doi:10.1063/1.2830834

Published 11 January 2008

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Suvranta K. Tripathy, Guibao Xu, Xiaodong Mu, and Yujie J. Ding
Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA

Kejia Wang, Yu Cao, and Debdeep Jena
Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA

Jacob B. Khurgin
Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA
We have observed that the temperature of the electrons drifting under a relatively high electric field in an AlN/GaN-based high-electron-mobility transistor is significantly higher than the lattice temperature (i.e., the hot electrons are generated). These hot electrons are produced through the Fröhlich interaction between the drifting electrons and long-lived longitudinal-optical phonons. By fitting electric field versus electron temperature deduced from the measurements of photoluminescence spectra to a theoretical model, we have deduced the longitudinal-optical-phonon emission time for each electron is to be on the order of 100  fs. ©2008 American Institute of Physics
History: Received 29 August 2007; accepted 12 December 2007; published 11 January 2008
Permalink: http://link.aip.org/link/?APPLAB/92/013513/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2008

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0003-6951 (print)   1077-3118 (online)
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