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The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition

Appl. Phys. Lett. 92, 041911 (2008); doi:10.1063/1.2840192

Published 31 January 2008

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N. Dietz,1 M. Alevli,1 R. Atalay,1 G. Durkaya,1 R. Collazo,2 J. Tweedie,2 S. Mita,2 and Z. Sitar2
1Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30302-4106, USA
2Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA
The influence of substrate polarity on the properties of InN layers grown by high-pressure chemical vapor deposition has been studied. The 2Theta-omega x-ray diffraction scans on InN layers deposited on polar GaN epilayers revealed single-phase InN(0002) with a full width at half maximum (FWHM) of around 200  arc  sec. InN layers grown on N-polar GaN exhibit larger FWHMs. Rocking curve analysis confirmed single-phase InN for both growth polarities, with FWHM values for omega-RC(002) at 2080  arc  sec for InN grown on Ga-polar templates. The A1(LO) Raman mode analysis shows higher free carrier concentrations in InN grown on N-polar templates, indicating that polarity affects the incorporation of impurities. ©2008 American Institute of Physics
History: Received 11 December 2007; accepted 14 January 2008; published 31 January 2008
Permalink: http://link.aip.org/link/?APPLAB/92/041911/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.J-
    Thin film morphology
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 81.15.Gh
    Chemical vapor deposition
  • 78.66.Fd
    Optical properties of III-V semiconductors (thin films)
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (16)
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