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Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices

Appl. Phys. Lett. 92, 053112 (2008); doi:10.1063/1.2842388

Published 8 February 2008

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Minjoo Larry Lee and Rama Venkatasubramanian
Center for Solid State Energetics, RTI International, Research Triangle Park, North Carolina 27709, USA
We report on the effect of nanodot (ND) areal density and period on cross-plane thermal conductivity kappa[perpendicular] in SiGe/Si nanodot superlattices (NDSLs). For all ND areal densities considered, we found that kappa[perpendicular] in SiGe/Si NDSLs decreased monotonically with decreasing period and reached values lower than those in typical SiGe alloys (~6.5  W  m−1  K−1). At short periods, kappa[perpendicular] was as low as 2.0–2.7  W  m−1  K−1 and at a fixed period, increasing the ND areal density led to lower kappa[perpendicular]. This work indicates that low kappa[perpendicular] can be attained in SiGe/Si NDSLs either with a low SL period, a high ND areal density, or both. ©2008 American Institute of Physics
History: Received 28 November 2007; accepted 19 January 2008; published 8 February 2008
Permalink: http://link.aip.org/link/?APPLAB/92/053112/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.65.Cd
    Superlattices (structure and nonelectronic properties)
  • 66.70.-f
    Nonelectronic thermal conduction and heat-pulse propagation in solids
  • 81.15.Gh
    Chemical vapor deposition
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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