Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Lower current operation of phase change memory cell with a thin TiO2 layer
The phase change memory cell with 8  nm TiO2 layer inserted between phase change material Ge2Sb2Te5 and bottom heating electrode tungsten was fabricated. It showed an advanced electrical thr...
Next Article
Stochastic data processing circuit based on single electrons using nanoscale field-effect transistors
A circuit utilizing single electrons is demonstrated at room temperature using a silicon-on-insulator metal-oxide-semiconductor field-effect transistor (MOSFET). Individual electrons randomly passing ...

Atomic size mismatch strain induced surface reconstructions

Appl. Phys. Lett. 92, 062104 (2008); doi:10.1063/1.2841846

Published 13 February 2008

You are not logged in to this journal. Log in

Jessica E. Bickel,1 Normand A. Modine,2 Anton Van der Ven,1 and Joanna Mirecki Millunchick1
1Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
2Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
The effects of lattice mismatch strain and atomic size mismatch strain on surface reconstructions are analyzed using density functional theory. These calculations demonstrate the importance of an explicit treatment of alloying when calculating the energies of alloyed surface reconstructions. Lattice mismatch strain has little impact on surface dimer ordering for the alpha2(2×4) reconstruction of GaAs alloyed with In. However, atomic size mismatch strain induces the surface In atoms to preferentially alternate position, which, in turn, induces an alternating configuration of the surface anion dimers. These results agree well with experimental data for alpha2(2×4) domains in InGaAs/GaAs surfaces. ©2008 American Institute of Physics
History: Received 9 November 2007; accepted 21 January 2008; published 13 February 2008
Permalink: http://link.aip.org/link/?APPLAB/92/062104/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (254 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.35.bg
    Surface structure of semiconductors
  • 68.35.Md
    Surface thermodynamics and surface energies of solids
  • 81.65.-b
    Surface treatments
  • 68.35.Dv
    Composition, segregation; defects and impurities (solid surfaces/interfaces)
  • YEAR: 2008

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (17)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. P. Kratzer, E. Penev, and M. Scheffler, Appl. Surf. Sci. 216, 436 (2003).
  2. Z. X. Xie, X. Xu, J. Tang, and B. W. Mao, J. Phys. Chem. B 104, 11719 (2000).
  3. V. Bresslerhill, M. Wassermeier, K. Pond, R. Maboudian, G. A. D. Briggs, P. M. Petroff, and W. H. Weinberg, J. Vac. Sci. Technol. B 10, 1992 (1992).
  4. W. Barvosa-Carter, R. S. Ross, C. Ratsch, F. Grosse, J. H. G. Owen, and J. J. Zinck, Surf. Sci. 499, L129 (2002).
  5. S. B. Zhang and A. Zunger, Phys. Rev. B 53, 1343 (1996).
  6. C. Ratsch, Phys. Rev. B 63, 161306 (2001).
  7. A. Antons, Y. Cao, B. Voigtländer, K. Schroeder, R. Berger, and S. Blügel, Europhys. Lett. 62, 547 (2003).
  8. H. Yamaguchi, R. S. Ross, and Y. Horikoshi, Phys. Rev. B 51, 9836 (1995).
  9. G. R. Bell, M. Itoh, T. S. Jones, B. A. Joyce, and D. D. Vvendensky, Surf. Sci. 433, 455 (1999).
  10. G. Kresse and J. Hafner, Phys. Rev. B 47, 558 (1993);
    11. G. Kresse and J. Furthmüller, ibid. 54, 11169 (1996);
    G. Kresse and J. Hafner, J. Phys.: Condens. Matter 6, 8245 (1994).
  11. D. Vanderbilt, Phys. Rev. B 41, 7892 (1990).
  12. D. M. Ceperley and B. J. Alder, Phys. Rev. Lett. 45, 566 (1980).
  13. This lattice model, fit to DFT energies of seven dimer arrangements and performed on a 24×24 cell, includes interactions up to the third nearest neighbor and predicts a difference in energy between the Z and R models of 11  meV per (2×4) surface unit cell.
  14. A. Bosacchi, F. Calonna, S. Franchi, P. Pascarella, P. Allegri, and V. Avanzini, J. Cryst. Growth 150, 185 (1995).
  15. J. H. Cho, S. B. Zhang, and A. Zunger, Phys. Rev. Lett. 84, 3654 (2000).
  16. A. Riposan, J. Mirecki Millunchick, and C. Pearson, J. Vac. Sci. Technol. A 24, 2041 (2006).
  17. F. Patella, A. Sgarlata, F. Arciprete, S. Nufris, P. D. Szkutnik, E. Placidi, M. Fanfoni, N. Motta, and A. Balzarotti, J. Phys.: Condens. Matter 16, S1503 (2004).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics