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Fringing field effects on electrical resistivity of semiconductor nanowire-metal contacts

Appl. Phys. Lett. 92, 083503 (2008); doi:10.1063/1.2889534

Published 27 February 2008

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Jun Hu,1 Yang Liu,2 C. Z. Ning,3 Robert Dutton,2 and Sung-Mo Kang4
1Baskin School of Engineering, University of California, 1156 High Street, Santa Cruz, California 95064, USA
2Integrated Circuits Laboratory, Stanford University, Stanford, California 94305, USA
3Center for Nanophotonics and Department of Electrical Engineering, Arizona State University, Tempe, Arizona 85287, USA
4School of Engineering, University of California, Merced, 5200 North Lake Road, Merced, California 95343, USA
Metal contacts play an important role in nanowire devices and are expected to exhibit qualitatively different properties from those of planar contacts due to small contact cross sections. We numerically investigate certain unique properties of nanowire-metal contacts and demonstrate that contact resistivity increases as nanowire radius shrinks. This increase is more significant for nanowire-three-dimensional metal contacts than for nanowire-one-dimensional metal contacts. The underlying cause for this size effect is identified as the strong fringing field effects, which become more significant as temperature decreases. Our simulation provides a more complete understanding of the size effects on nanowire-metal contacts. ©2008 American Institute of Physics
History: Received 16 December 2007; accepted 4 February 2008; published 27 February 2008
Permalink: http://link.aip.org/link/?APPLAB/92/083503/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.63.Rt
    Nanoscale contacts (electronic transport)
  • 73.63.Nm
    Quantum wires (electronic transport)
  • 73.40.Cg
    Contact resistance, contact potential
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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