High temperature resistance of small diameter, metallic single-walled carbon nanotube devices
Appl. Phys. Lett. 92, 083506 (2008); doi:10.1063/1.2885092
Published 28 February 2008
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The effects of high temperature cycling on the resistance of metallic single-walled carbon nanotube (SWCNT) devices is measured in situ. Individual, small-diameter SWCNTs contacted by palladium or titanium electrodes were measured from room temperature up to 1000 K in ultrahigh vacuum. Upon the first thermal cycling, the device resistances fluctuate and generally decrease. Pd-contacted devices typically become stable by 450 K, whereas Ti-contacted devices require higher treatments above 600 K. Once these temperatures have been exceeded, subsequent thermal cycling has minimal effects. Heat-treated devices exhibit linear temperature dependences, with Pd and Ti contacts producing average temperature coefficients of −3×10−4/K and 1.1×10−3/K, respectively.
©2008 American Institute of Physics
| History: | Received 9 November 2007; accepted 26 January 2008; published 28 February 2008 |
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http://link.aip.org/link/?APPLAB/92/083506/1 |
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0003-6951 (print)
1077-3118 (online)
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