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Diffusion of nickel and tin in p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 thermoelectric materials

Appl. Phys. Lett. 92, 101910 (2008); doi:10.1063/1.2896310

Published 11 March 2008

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Y. C. Lan,1 D. Z. Wang,1 G. Chen,2 and Z. F. Ren1
1Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA
2Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
The diffusion and spatial distribution of tin from solder, and nickel from diffusion barrier in p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3 thermoelectric materials were investigated using electron microscopy. The results indicate that nickel is a suitable diffusion-barrier material for tin in both (Bi,Sb)2Te3 and Bi2(Te,Se)3. However, even though it is not an issue in the (Bi,Sb)2Te3, the nickel diffuses several microns into the Bi2(Te,Se)3 during the soldering processing and degrades its performance. Diffusion coefficients of nickel in p-type (Bi,Sb)2Te3 and in n-type Bi2(Te,Se)3 were also quantitatively studied. ©2008 American Institute of Physics
History: Received 22 January 2008; accepted 20 February 2008; published 11 March 2008
Permalink: http://link.aip.org/link/?APPLAB/92/101910/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • 66.30.Ny
    Chemical interdiffusion in solids
  • 72.20.Pa
    Thermoelectric and thermomagnetic effects (semiconductors/insulators)
  • 72.80.Jc
    Electrical conductivity of other crystalline inorganic semiconductors
  • 81.20.Vj
    Joining; welding
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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