Subwavelength imaging of light confinement in high-Q/small-V photonic crystal nanocavity
The optical near field of a high-Q and ultrasmall volume photonic crystal nanocavity is visualized with a subwavelength resolution by using a scanning near-field optical microscope (SNOM) operating at...
The optical near field of a high-Q and ultrasmall volume photonic crystal nanocavity is visualized with a subwavelength resolution by using a scanning near-field optical microscope (SNOM) operating at...
Epitaxially grown n-ZnO/MgO/TiN/n+-Si(111) heterostructured light-emitting diode
Epitaxial n-ZnO/MgO/TiN/n+-Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgO/TiN on Si(111) was established by pulsed laser deposition, which was further empl...
Epitaxial n-ZnO/MgO/TiN/n+-Si heterostructured light-emitting diodes have been fabricated. The epitaxial growth of MgO/TiN on Si(111) was established by pulsed laser deposition, which was further empl...
High quantum efficiency two color type-II InAs/GaSb n-i-p-p-i-n photodiodes
Appl. Phys. Lett. 92, 111112 (2008); doi:10.1063/1.2898528
Published 21 March 2008
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A n-i-p-p-i-n photodiode based on type-II InAs/GaSb superlattice was grown on a GaSb substrate. The two channels, with respective 50% of responsivity cutoff wavelengths at 7.7 and 10 µm, presented quantum efficiencies (QEs) of 47% and 39% at 77 K. The devices can be operated as two diodes for simultaneous detection or as a single n-i-p-p-i-n detector for sequential detection. In the latter configuration, the QEs at 5.3 and 8.5 µm were measured as high as 40% and 39% at 77 K. The optical cross-talk between the two channels could be reduced from 0.36 to 0.08 by applying a 50 mV bias.
©2008 American Institute of Physics
| History: | Received 5 December 2007; accepted 22 February 2008; published 21 March 2008 |
| Permalink: |
http://link.aip.org/link/?APPLAB/92/111112/1 |
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BibSonomy
KEYWORDS and PACS
gallium compounds,
III-V semiconductors,
indium compounds,
optical crosstalk,
p-i-n photodiodes,
semiconductor superlattices
- 85.60.Dw
Photodiodes; phototransistors; photoresistors - YEAR: 2008
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
REFERENCES (9)
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