Thermal stability of dysprosium scandate thin films
The thermal stability of DyScO3 thin films in contact with SiO2 or HfO2 during annealing up to 1000 °C has been studied. It is found that DyScO3/SiO2 stacks react during annealing and a...
The thermal stability of DyScO3 thin films in contact with SiO2 or HfO2 during annealing up to 1000 °C has been studied. It is found that DyScO3/SiO2 stacks react during annealing and a...
Metal gate: HfO2 metal-oxide-semiconductor structures on high-indium-content InGaAs substrate using physical vapor deposition
In this work, we studied the effects of postdeposition anneal (PDA) time on the material and electrical characteristics of the metal-oxide-semiconductor capacitor (MOSCAP) with high-k (HfO2) material ...
In this work, we studied the effects of postdeposition anneal (PDA) time on the material and electrical characteristics of the metal-oxide-semiconductor capacitor (MOSCAP) with high-k (HfO2) material ...
Microwave dielectric loss at single photon energies and millikelvin temperatures
Appl. Phys. Lett. 92, 112903 (2008); doi:10.1063/1.2898887
Published 18 March 2008
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The microwave performance of amorphous dielectric materials at very low temperatures and very low excitation strengths displays significant excess loss. Here, we present the loss tangents of some common amorphous and crystalline dielectrics, measured at low temperatures (T<100 mK) with near single-photon excitation energies, E/![[h-bar]](http://scitation.aip.org/stockgif3/planck.gif)
0~1, using both coplanar waveguide and lumped LC resonators. The loss can be understood using a two-level state defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is theoretically considered.
©2008 American Institute of Physics
0~1, using both coplanar waveguide and lumped LC resonators. The loss can be understood using a two-level state defect model. A circuit analysis of the half-wavelength resonators we used is outlined, and the energy dissipation of such a resonator on a multilayered dielectric substrate is theoretically considered.
©2008 American Institute of Physics
| History: | Received 16 February 2008; accepted 27 February 2008; published 18 March 2008 |
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