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Iron point defect reduction in multicrystalline silicon solar cells

Appl. Phys. Lett. 92, 122103 (2008); doi:10.1063/1.2898204

Published 25 March 2008

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Matthew D. Pickett1 and Tonio Buonassisi2
1Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
2Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
In this work, we propose and demonstrate an annealing procedure designed to improve the performance of iron-contaminated silicon solar cells. Specifically, we put forward the idea that cells contaminated with iron should be annealed at appropriate times and temperatures to allow for the transformation from supersaturated point defects to distributed iron silicide precipitates. We examine the optimal transformation rate for string ribbon multicrystalline silicon and demonstrate that a 30  min annealing can improve the efficiency of cells manufactured from low-purity feedstock. ©2008 American Institute of Physics
History: Received 8 January 2008; accepted 26 February 2008; published 25 March 2008
Permalink: http://link.aip.org/link/?APPLAB/92/122103/1

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KEYWORDS and PACS

Keywords
PACS
  • 84.60.Jt
    Photoelectric conversion: solar cells and arrays
  • 61.72.J-
    Point defects and defect clusters
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • 64.70.K-
    Solid-solid transitions
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (11)
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