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Near-field scanning optical microscopy with monolithic silicon light emitting diode on probe tip

Appl. Phys. Lett. 92, 131106 (2008); doi:10.1063/1.2904698

Published 31 March 2008

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Kazunori Hoshino,1 Lynn J. Rozanski,2 David A. Vanden Bout,2 and Xiaojing Zhang1
1Department of Biomedical Engineering, Microelectronics Research Center and Center for Nano and Molecular Materials Science and Technology, The University of Texas at Austin, Austin, 78758 Texas USA
2Department of Chemistry and Biochemistry and Center for Nano and Molecular Materials Science and Technology, The University of Texas at Austin, Austin, 78712 Texas USA
We describe optical and topographic imaging using a light emitting diode monolithically integrated on a silicon probe tip for near-field scanning optical microscopy (NSOM). The light emission resulted from a silicon dioxide layer buried between a phosphorus-doped N+ silicon layer and a gallium-doped P+ silicon region locally created at the tip by a focused ion beam. The tip was employed in a standard NSOM excitation setup. The probe successfully measured optical as well as topographic images of a chromium test pattern with imaging resolutions of 400 and 50  nm, respectively. The directional resolution dependence of the acquired images directly corresponds to the shape, size, and polarity of the light source on the probe tip. To our knowledge, this report is the first successful near-field imaging result directly measured by such tip-embedded light sources. ©2008 American Institute of Physics
History: Received 13 September 2007; accepted 8 March 2008; published 31 March 2008
Permalink: http://link.aip.org/link/?APPLAB/92/131106/1
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KEYWORDS and PACS

Keywords
PACS
  • 07.79.Fc
    Near-field scanning optical microscopes
  • 85.60.Jb
    Light-emitting devices
  • 42.30.Va
    Image forming and processing
  • 42.82.Gw
    Other integrated-optical elements and systems
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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