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1.55  µm ultrafast photoconductive switches based on ErAs:InGaAs

Appl. Phys. Lett. 92, 131117 (2008); doi:10.1063/1.2907335

Published 3 April 2008

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F. Ospald,1 D. Maryenko,1 K. von Klitzing,1 D. C. Driscoll,2 M. P. Hanson,2 H. Lu,2 A. C. Gossard,2 and J. H. Smet1
1Max-Planck-Institut für Festkörperforschung, Heisenbergstraße 1, 70569 Stuttgart, Germany
2Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106-5050, USA
The electron capture time in superlattice structures consisting of periodically spaced layers of self-assembled ErAs nanoislands and In0.53Ga0.47As is investigated on photoconductive switches as a function of the superlattice period using photocurrent autocorrelation and pulsed laser excitation at 1.55  µm. The capture time can be tuned from picoseconds all the way down to 0.2  ps by changing the periodicity. Two different Be doping schemes are explored to reduce the dark current. The resulting characteristics indicate that ErAs:InGaAs may serve as a high performance photoconductive material at this wavelength for pulsed terahertz emission and detection. ©2008 American Institute of Physics
History: Received 16 January 2008; accepted 17 March 2008; published 3 April 2008
Permalink: http://link.aip.org/link/?APPLAB/92/131117/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.-q
    Optoelectronic devices
  • YEAR: 2008

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0003-6951 (print)   1077-3118 (online)
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