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Quantitative analysis of electronic transport through weakly coupled metal/organic interfaces
Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find th...

Enhanced hole mobility in ambipolar rubrene thin film transistors on polystyrene

Appl. Phys. Lett. 92, 133302 (2008); doi:10.1063/1.2904964

Published 31 March 2008

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Byoungnam Park,1 Insik In,1 Padma Gopalan,1 Paul G. Evans,1 Seth King,2 and Paul F. Lyman2
1Department Materials Science and Engineering and Materials Science Program, University of Wisconsin, 1509 University Ave., Madison, Wisconsin 53706, USA
2Department of Physics, University of Wisconsin, 1900 E. Kenwood Blvd., Milwaukee, Wisconsin 53201, USA
We report amorphous rubrene thin film transistors with a polystyrene intermediate layer on the SiO2 gate dielectric that have hole mobilities up to 0.01  cm2/V  s. This improvement by two orders of magnitude over devices formed on SiO2 alone occurs without the crystallization of rubrene. The enhanced charge transport is a result of the more planar growth and subsequent better geometrical connection of the first molecular layers of rubrene. Ambipolar conduction in the rubrene suggests that polystyrene minimizes the concentration of interfacial electron trap states. ©2008 American Institute of Physics
History: Received 23 January 2008; accepted 13 March 2008; published 31 March 2008
Permalink: http://link.aip.org/link/?APPLAB/92/133302/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.30.De
    Semiconductor-device characterization, design, and modeling
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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