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We measure current by counting single electrons tunneling through an InAs nanowire quantum dot (QD). The charge detector is realized by fabricating a quantum point contact in close vicinity to the nan...

Strain and composition mapping of epitaxial nanostructures

Appl. Phys. Lett. 92, 151914 (2008); doi:10.1063/1.2908214

Published 18 April 2008

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C. N. Cionca,1 A. Riposan,1 D. P. Kumah,2 N. S. Husseini,2 D. A. Walko,3 Y. Yacoby,4 J. M. Millunchick,2,5 and R. Clarke1,2
1Physics Department, University of Michigan, Ann Arbor, Michigan 48109, USA
2Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA
3Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA
4Racah Institute of Physics, Hebrew University, Jerusalem 91904, Israel
5Materials Science and Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, USA
We have used surface x-ray diffraction and a direct method of phase reconstruction to obtain subangström resolution maps of an ion-beam milled In0.27Ga0.73As/GaAs(001) thin film exhibiting three-dimensional (3D) epitaxial nanostructures. The 3D electron density was calculated based on the diffraction pattern along the Bragg rods measured with synchrotron radiation, from which the chemical composition, strain profile, and average nanostructure shape were extracted. The film maintained a wetting layer exhibiting a sharp strain gradient, which extended into the substrate. Atop the wetting layer, the ion-beam milled islands possessed an apical shape and were depleted in indium. ©2008 American Institute of Physics
History: Received 22 February 2008; accepted 22 March 2008; published 18 April 2008
Permalink: http://link.aip.org/link/?APPLAB/92/151914/1
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KEYWORDS and PACS

Keywords
PACS
  • 61.46.-w
    Structure of nanoscale materials
  • 68.55.Nq
    Thin film composition and phase identification
  • 68.35.Ct
    Solid-solid interface structure and roughness
  • 72.80.Ey
    Electrical conductivity of III-V and II-VI semiconductors
  • 72.20.-i
    Electrical conductivity phenomena in semiconductors and insulators
  • 73.40.Kp
    Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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