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Very low sheet resistance and Shubnikov–de-Haas oscillations in two-dimensional electron gases at ultrathin binary AlN/GaN heterojunctions

Appl. Phys. Lett. 92, 152112 (2008); doi:10.1063/1.2911748

Published 17 April 2008

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Yu Cao, Kejia Wang, Alexei Orlov, Huili Xing, and Debdeep Jena
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA
Very low sheet resistance two-dimensional electron gases have been obtained at ultrathin AlN/GaN heterojunctions. By investigating the molecular beam epitaxy growth conditions, the interface roughness at the heterojunction has been reduced, leading to high room-temperature electron mobilities (µ~1400–1600  cm2/V  s) and high electron sheet densities due to spontaneous and piezoelectric polarization (ns~1–3×1013  cm−2) depending on the AlN thickness. This combination led to a large reduction of the room-temperature sheet resistance of 148  Omega/[square, open], a new record. The improved transport properties have made it possible to observe Shubnikov–de-Haas oscillations of the magnetoresistance of the two-dimensional electron gas at ultrathin binary AlN/GaN heterojunctions for the first time. The results are indicative of the vast potential of high-quality AlN/GaN structures for a variety of device applications. ©2008 American Institute of Physics
History: Received 31 December 2007; accepted 28 March 2008; published 17 April 2008
Permalink: http://link.aip.org/link/?APPLAB/92/152112/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.61.Ga
    Electrical properties of II-VI semiconductors (thin films)
  • 73.40.Kp
    Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  • 73.50.Jt
    Galvanomagnetic and other magnetotransport effects in thin films
  • 68.35.Ct
    Solid-solid interface structure and roughness
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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