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Imaging mechanism of piezoresponse force microscopy in capacitor structures

Appl. Phys. Lett. 92, 152906 (2008); doi:10.1063/1.2905266

Published 18 April 2008

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Sergei V. Kalinin,1 Brian J. Rodriguez,1 Seung-Hyun Kim,2 Suk-Kyoung Hong,3 Alexei Gruverman,4 and Eugene A. Eliseev5
1Materials Science and Technology Division and the Center for Nanophase Materials Science, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
2INOSTEK, Inc., Gyeonggi 426-901, Republic of Korea
3Hynix Semiconductor, Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Republic of Korea
4Department of Physics and Astronomy, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0111, USA
5Institute for Problems of Materials Science, National Academy of Science of Ukraine, 3, Krjijanovskogo, Kiev 03142, Ukraine
The image formation mechanism in piezoresponse force microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses and derive the corresponding analytical expressions. For many perovskites, the opposite contributions of d31 and d33 components can result in anomalous domain wall profiles. This analysis establishes the applicability limits of PFM for polarization dynamics studies in capacitors and applies them to other structural probes, including focused x-ray studies of capacitor structures. ©2008 American Institute of Physics
History: Received 17 January 2008; accepted 13 March 2008; published 18 April 2008
Permalink: http://link.aip.org/link/?APPLAB/92/152906/1
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KEYWORDS and PACS

Keywords
PACS
  • 84.32.Tt
    Capacitors
  • 85.50.-n
    Dielectric, ferroelectric, and piezoelectric devices
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (21)
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