Two-photon excited luminescence spectral distribution observation in wide-gap semiconductor crystals
The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc sele...
The use of photoluminescence excited with two-photon process for characterizing the defect and impurity level in wide-gap semiconductor is discussed in this paper. Defects of polycrystalline zinc sele...
Silicon light emitting diodes emitting over the 1.2–1.4 µm wavelength region in the extended optical communication band
Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2–1.35 µm range. This is achieved by the implantation of the rare earth thulium, incorporated in the...
Here, we demonstrate bulk silicon light emitting diodes operating over the 1.2–1.35 µm range. This is achieved by the implantation of the rare earth thulium, incorporated in the...
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Photonic crystal nanocavities are fabricated in silicon membranes covered by thermally annealed silicon-rich nitride films with Erbium-doped silicon nanocrystals. Silicon nitride films were deposited by sputtering on top of silicon on insulator wafers. The nanocavities were carefully designed in order to enhance emission from the nanocrystal sensitized Erbium at the 1540 nm wavelength. Experimentally measured quality factors of ~6000 were found to be consistent theoretical predictions. The Purcell factor of 1.4 was estimated from the observed 20-fold enhancement of Erbium luminescence.
©2008 American Institute of Physics
| History: | Received 7 February 2008; accepted 1 April 2008; published 22 April 2008 |
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http://link.aip.org/link/?APPLAB/92/161107/1 |
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- Erratum: “Enhanced light emission in photonic crystal nanocavities with erbium-doped silicon nanocrystals” [Appl. Phys. Lett. 92, 161107 (2008)]
Maria Makarova et al.
Appl. Phys. Lett. 92, 219902 (2008)
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0003-6951 (print)
1077-3118 (online)
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REFERENCES (10)
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- N. M. Park, C. J. Choi, T. Y. Seong, and S. J. Park, Phys. Rev. Lett. 86, 1355 (2001).
- L. Dal Negro, J. H. Yi, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli, Appl. Phys. Lett. 88, 183103 (2006).
- L. Dal Negro, J. H. Yi, J. Michel, L. C. Kimerling, S. Hamel, A. Williamson, and G. Galli,
IEEE J. Sel. Top. Quantum Electron. 12, 1628 (2006) . - L. Dal Negro, S. Hamel, N. Zaitseva, J. H. Yi, A. Williamson, M. Stolfi, J. Michel, G. Galli, and L. C. Kimerling,
IEEE J. Sel. Top. Quantum Electron. 12, 1151 (2006) . - L. Dal Negro, R. Li, J. Warga, S. Yerci, S. Basu, H. Hamel, and G. Galli, in Silicon Nanophotonics: Basic Principles, Present Status and Perspectives, edited by L. Khriachtchev (World Scientific, Singapore, in press).
- E. M. Purcell,
Phys. Rev. 69, 681 (1946) . - J. Vuckovic, C. Santori, D. Fattal, M. Pelton, G. S. Solomon, and Y. Yamamoto, in Optical Microcavities, edited by K. Vahala (World Scientific, Singapore, 2004).
- M. Galli, A. Politi, M. Belotti, D. Gerace, M. Liscidini, M. Patrini, L. C. Andreani, M. Miritello, A. Irrera, F. Priolo, and Y. Chen, Appl. Phys. Lett. 88, 251114 (2006).
- M. Makarova, J. Vuckovic, H. Sanda, and Y. Nishi, Appl. Phys. Lett. 89, 221101 (2006).
- J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer,
IEEE J. Quantum Electron. 38, 850 (2002) .
