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Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces

Appl. Phys. Lett. 92, 162902 (2008); doi:10.1063/1.2908223

Published 21 April 2008

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Justin C. Hackley,1 J. Derek Demaree,2 and Theodosia Gougousi1
1Department of Physics, University of Maryland Baltimore County (UMBC), Baltimore, Maryland 21250, USA
2Weapons and Materials Research Directorate, Army Research Laboratory, Aberdeen Proving Ground, Maryland 21005-5069, USA
HfO2 films have been deposited by using a tetrakis(dimethylamino)hafnium/H2O atomic layer deposition (ALD) process on GaAs. X-ray photoelectron spectroscopy measurements show that the HF and NH4OH predeposition surface treatment results in efficient removal of the Ga and As native oxides. No interface oxidation is detected after 15  cycles of HfO2 ALD implying effective passivation of the GaAs surface. Spectroscopic ellipsometry confirms linear growth at 1.0  Å/cycle on both starting surfaces, while Rutherford backscattering spectrometry indicates steady-state coverage after about 10 ALD cycles. For films grown on native oxide GaAs, complete removal of the As oxide is observed after 20 ALD cycles. ©2008 American Institute of Physics
History: Received 27 February 2008; accepted 24 March 2008; published 21 April 2008
Permalink: http://link.aip.org/link/?APPLAB/92/162902/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.05.-t
    Specific materials: fabrication, treatment, testing and analysis
  • 81.15.Ef
    Vacuum deposition
  • 68.55.aj
    Insulator thin film nucleation and growth
  • 77.55.+f
    Dielectric thin films
  • 79.60.Jv
    Photoelectron spectra of interfaces; heterostructures; nanostructures
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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