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Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs

Appl. Phys. Lett. 92, 192502 (2008); doi:10.1063/1.2927481

Published 13 May 2008

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S. Mack, R. C. Myers, J. T. Heron, A. C. Gossard, and D. D. Awschalom
Center for Spintronics and Quantum Computation, University of California, Santa Barbara, California 93106, USA
Heavily alloyed, 100  nm Ga1−xMnxAs (x>0.1) films are obtained via low-temperature molecular beam epitaxy by utilizing a combinatorial technique which allows systematic control of excess arsenic during growth. Reproducible electronic, magnetic, and structural properties are optimized in a narrow range of stoichiometric growth conditions. In contrast to a prediction of the Zener model of hole-mediated ferromagnetism, the Curie temperature of the stoichiometric material is independent of x (for x>0.1), while substitutional Mn content is proportional to x within a large window of growth conditions. ©2008 American Institute of Physics
History: Received 21 March 2008; accepted 15 April 2008; published 13 May 2008
Permalink: http://link.aip.org/link/?APPLAB/92/192502/1
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KEYWORDS and PACS

Keywords
PACS
  • 75.70.-i
    Magnetic properties of thin films, surfaces, and interfaces
  • 75.30.Kz
    Magnetic phase boundaries
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 75.50.Dd
    Nonmetallic ferromagnetic materials
  • 75.50.Pp
    Magnetic semiconductors
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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