Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite
Appl. Phys. Lett. 92, 202904 (2008); doi:10.1063/1.2931706
Published 21 May 2008
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We report on the discovery of a lead-free morphotropic phase boundary (MPB) in Sm doped BiFeO3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi0.86Sm0.14FeO3 with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented PbZr0.52Ti0.48O3 (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT.
©2008 American Institute of Physics
| History: | Received 9 April 2008; accepted 19 April 2008; published 21 May 2008 |
| Permalink: |
http://link.aip.org/link/?APPLAB/92/202904/1 |
KEYWORDS and PACS
antiferroelectric materials,
bismuth compounds,
ferroelectric materials,
ferroelectric transitions,
permittivity,
piezoelectric thin films,
piezoelectricity,
samarium compounds
- 77.84.Bw
Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc - 77.55.+f
Dielectric thin films - 77.80.Bh
Ferroelectric phase transitions and Curie point - 77.22.Ch
Permittivity (dielectric function) - 77.65.Bn
Piezoelectric and electrostrictive constants - 81.30.Hd
Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder - YEAR: 2008
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
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