Applied Physics Letters
   
 
 
 
Previous Article
Self-aligned n-channel metal-oxide-semiconductor field effect transistor on high-indium-content In0.53Ga0.47As and InP using physical vapor deposition HfO2 and silicon interface passivation layer
In this work, we present the electrical and material characteristics of TaN/HfO2/In0.53Ga0.47As and InP substrate metal-oxide-semiconductor capacitors and self-aligned n-channel metal-oxide-semiconduc...
Next Article
Characterization of piezoelectric single crystal YCa4O(BO3)3 for high temperature applications
Operation at temperatures well above ambient is desired for applications such as smart structures integrated within aircraft and space vehicles. Piezoelectric yttrium calcium oxyborate single crystal ...

Combinatorial discovery of a lead-free morphotropic phase boundary in a thin-film piezoelectric perovskite

Appl. Phys. Lett. 92, 202904 (2008); doi:10.1063/1.2931706

Published 21 May 2008

You are not logged in to this journal. Log in

S. Fujino,1 M. Murakami,1 V. Anbusathaiah,2 S.-H. Lim,1 V. Nagarajan,2 C. J. Fennie,3 M. Wuttig,1 L. Salamanca-Riba,1 and I. Takeuchi1
1Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA
2School of Materials Science, University of New South Wales, Sydney New South Wales 2052, Australia
3Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

We report on the discovery of a lead-free morphotropic phase boundary (MPB) in Sm doped BiFeO3 with a simple perovskite structure using the combinatorial thin film strategy. The boundary is a rhombohedral to pseudo-orthorhombic structural transition which exhibits a ferroelectric to antiferroelectric transition at approximately Bi0.86Sm0.14FeO3 with dielectric constant and out-of-plane piezoelectric coefficient comparable to those of epitaxial (001) oriented PbZr0.52Ti0.48O3 (PZT) thin films at the MPB. The discovered composition may be a strong candidate of a Pb-free piezoelectric replacement of PZT. ©2008 American Institute of Physics
History: Received 9 April 2008; accepted 19 April 2008; published 21 May 2008
Permalink: http://link.aip.org/link/?APPLAB/92/202904/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (557 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 77.84.Bw
    Dielectric, piezoelectric, and ferroelectric elements, oxides, nitrides, borides, carbides, chalcogenides, etc
  • 77.55.+f
    Dielectric thin films
  • 77.80.Bh
    Ferroelectric phase transitions and Curie point
  • 77.22.Ch
    Permittivity (dielectric function)
  • 77.65.Bn
    Piezoelectric and electrostrictive constants
  • 81.30.Hd
    Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
  • YEAR: 2008

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (18)

For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).
  2. Y. Saito, H. Takao, T. Tani, T. Nonomiya, K. Takatori, T. Homma, T. Nagaya, and M. Nakamura, Nature (London) 432, 84 (2004).
  3. H. Uchida, R. Ueno, H. Funakubo, and S. Koda, J. Appl. Phys. 100, 014106 (2006).
  4. G. L. Yuan, S. W. Or, J. M. Liu, and Z. G. Liu, Appl. Phys. Lett. 89, 052905 (2006).
  5. G. L. Yuan and S. W. Or, J. Appl. Phys. 100, 024109 (2006).
  6. S. E. Park and T. R. Shrout, J. Appl. Phys. 82, 1804 (1997).
  7. R. Guo, L. E. Cross, S.-E. Park, B. Noheda, D. E. Cox, and G. Shirane, Phys. Rev. Lett. 84, 5423 (1999).
  8. D. E. Cox, B. Noheda, G. Shirane, Y. Uesu, K. Fujishiro, and Y. Yamada, Appl. Phys. Lett. 79, 400 (2001).
  9. M. R. Suchomel and P. K. Davies, J. Appl. Phys. 96, 4405 (2004).
  10. I. Grinberg, M. R. Suchomel, P. K. Davies, and A. M. Rappe, J. Appl. Phys. 98, 094111 (2005).
  11. T. Fukumura, M. Ohtani, M. Kawasaki, Y. Okimoto, T. Kageyama, T. Koida, T. Hasegawa, Y. Tokura, and H. Koinuma, Appl. Phys. Lett. 77, 3426 (2000).
  12. Y. M. Jin, Y. U. Wang, A. G. Khachaturyan, J. F. Li, and D. Viehland, Phys. Rev. Lett. 91, 197601 (2003).
  13. F. Jona and G. Shirane, Ferroelectric Crystals (Pergamon, New York, 1962).
  14. V. Nagarajan, A. Stanishevsky, L. Chen, T. Zhao, B.-T. Liu, J. Melngailis, A. L. Royburd, R. Ramesh, J. Finder, Z. Yu, R. Droopad, and K. Eisenbeiser, Appl. Phys. Lett. 81, 4215 (2002).
  15. S. Trolier-McKinstry, N. B. Gharb, and D. Damjanovic, Appl. Phys. Lett. 88, 202901 (2006).
  16. S. T. Zhang, Y. Zhang, M. H. Lu, C-L. Du, Y-F. Chen, Z-G. Liu, and X. Q. Pan, Appl. Phys. Lett. 88, 162901 (2006).
  17. H. X. Fu and R. E. Cohen, Nature (London) 403, 281 (2000).
  18. P. Ravindran, R. Vidya, A. Kjekshus, and H. Fjellåg, Phys. Rev. B 74, 224412 (2006).

CITING ARTICLES

For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.