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Creating large area molecular electronic junctions using atomic layer deposition

Appl. Phys. Lett. 92, 213301 (2008); doi:10.1063/1.2917870

Published 27 May 2008

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Michael J. Preiner and Nicholas A. Melosh
Geballe Laboratory for Advanced Materials, Stanford University, 476 Lomita Mall-Stanford, California 94305, USA
We demonstrate a technique for creating large area, electrically stable molecular junctions. We use atomic layer deposition to create nanometer thick passivating layers of aluminum oxide on top of self-assembled organic monolayers with hydrophilic terminal groups. This layer acts as a protective barrier and allows simple vapor deposition of the top electrode without short circuits or molecular damage. This method allows nonshorting molecular junctions of up to 9  mm2 to be easily and reliably fabricated. The effect of passivation on molecular monolayers is studied with Auger and x-ray spectroscopy, while electronic transport measurements confirm molecular tunneling as the transport mechanism for these devices. ©2008 American Institute of Physics
History: Received 7 March 2008; accepted 3 April 2008; published 27 May 2008
Permalink: http://link.aip.org/link/?APPLAB/92/213301/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.65.+h
    Molecular electronic devices
  • 82.80.Pv
    Electron spectroscopy (chemical analysis)
  • 81.15.Ef
    Vacuum deposition
  • 81.15.Gh
    Chemical vapor deposition
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

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