Whispering gallery mode lasing in zinc oxide microwires
Lasing on whispering gallery modes was excited by optical pumping in single zinc oxide microwires fabricated by a simple carbothermal evaporation process. The experimentally observed laser modes agree...
Lasing on whispering gallery modes was excited by optical pumping in single zinc oxide microwires fabricated by a simple carbothermal evaporation process. The experimentally observed laser modes agree...
Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks
We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long...
We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long...
Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type 
-doping
Appl. Phys. Lett. 92, 241103 (2008); doi:10.1063/1.2948857
Published 17 June 2008
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High quality -doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with -doped p-GaN also achieve a maximum multiplication gain of 5.1×104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via -doping.
©2008 American Institute of Physics
-doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with -doped p-GaN also achieve a maximum multiplication gain of 5.1×104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via -doping.
©2008 American Institute of Physics
| History: | Received 13 May 2008; accepted 30 May 2008; published 17 June 2008 |
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