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Carrier scattering in graphene nanoribbon field-effect transistors

Appl. Phys. Lett. 92, 243124 (2008); doi:10.1063/1.2949749

Published 20 June 2008

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Yijian Ouyang,1 Xinran Wang,2 Hongjie Dai,2 and Jing Guo1
1Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA
2Department of Chemistry and Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA
The elastic scattering mean free path (mfp) in a graphene nanoribbon (GNR) is characterized to be short. In the absence of other scattering mechanisms, elastic scattering has a large effect on the source-drain current of a GNR field-effect transistor due to its quasi-one-dimensional channel. In the presence of optical phonon scattering, the effect of elastic scattering is reduced. The coupling of inelastic, short-mfp optical phonon scattering to elastic scattering results in an increase rather than a decrease of the source-drain current. Improving the GNR edge quality promises significant on-current improvement. ©2008 American Institute of Physics
History: Received 25 April 2008; accepted 2 June 2008; published 20 June 2008
Permalink: http://link.aip.org/link/?APPLAB/92/243124/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.35.-p
    Nanoelectronic devices
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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