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Room temperature continuous wave operation of quantum cascade lasers with 12.5% wall plug efficiency

Appl. Phys. Lett. 93, 021103 (2008); doi:10.1063/1.2957673

Published 14 July 2008

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Y. Bai, S. Slivken, S. R. Darvish, and M. Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
An InP based quantum cascade laser heterostructure emitting at 4.6  µm was grown with gas-source molecular beam epitaxy. The wafer was processed into a conventional double-channel ridge waveguide geometry with ridge widths of 19.7 and 10.6  µm without semi-insulating InP regrowth. An uncoated, narrow ridge device with a 4.8  mm cavity length was epilayer down bonded to a diamond submount and exhibits 2.5  W maximum output power with a wall plug efficiency of 12.5% at room temperature in continuous wave operation. ©2008 American Institute of Physics
History: Received 9 May 2008; accepted 23 June 2008; published 14 July 2008
Permalink: http://link.aip.org/link/?APPLAB/93/021103/1
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KEYWORDS and PACS

Keywords
PACS
  • 42.55.Px
    Semiconductor lasers; laser diodes
  • 42.60.By
    Design of specific laser systems
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (7)
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