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Reduction of thermal conductivity in wafer-bonded silicon

Appl. Phys. Lett. 93, 021917 (2008); doi:10.1063/1.2959063

Published 18 July 2008

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Z. L. Liau,1 L. R. Danielson,2 P. M. Fourspring,2 L. Hu,3 G. Chen,3 and G. W. Turner1
1Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420-9108, USA
2Lockheed Martin Company, Schenectady, New York 12301, USA
3Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
Blocks of silicon up to 3  mm thick have been formed by directly bonding stacks of thin wafer chips. These stacks showed significant reductions in the thermal conductivity in the bonding direction. In each sample, the wafer chips were obtained by polishing a commercial wafer to as thin as 36  µm, followed by dicing. Stacks whose starting wafers were patterned with shallow dots showed greater reductions in thermal conductivity. Diluted-HF treatment of wafer chips prior to bonding led to the largest reduction of the effective thermal conductivity, by approximately a factor of 50. Theoretical modeling based on restricted conduction through the contacting dots and some conduction across the planar nanometer air gaps yielded good agreement for samples fabricated without the HF treatment. ©2008 American Institute of Physics
History: Received 3 June 2008; accepted 25 June 2008; published 18 July 2008
Permalink: http://link.aip.org/link/?APPLAB/93/021917/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.40.-e
    Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
  • YEAR: 2008

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0003-6951 (print)   1077-3118 (online)
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REFERENCES (18)
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