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Realization of regular arrays of nanoscale resistive switching blocks in thin films of Nb-doped SrTiO3
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Organometallic vapor phase epitaxial growth of GaN on ZrN/AlN/Si substrates
Appl. Phys. Lett. 93, 023109 (2008); doi:10.1063/1.2953541
Published 16 July 2008
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An intermediate ZrN/AlN layer stack that enables the epitaxial growth of GaN on (111) silicon substrates using conventional organometallic vapor phase epitaxy at substrate temperatures of ~1000 °C is reported. The epitaxial (111) ZrN layer provides an integral back reflector and Ohmic contact to n-type GaN, whereas the (0001) AlN layer serves as a reaction barrier, as a thermally conductive interface layer, and as an electrical isolation layer. Smooth (0001) GaN films less than 1 µm thick grown on ZrN/AlN/Si yield 0002 x-ray rocking curve full width at half maximum values as low as 1230 arc sec.
©2008 American Institute of Physics
| History: | Received 22 April 2008; accepted 12 June 2008; published 16 July 2008 |
| Permalink: |
http://link.aip.org/link/?APPLAB/93/023109/1 |
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0003-6951 (print)
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