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The effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes

Appl. Phys. Lett. 93, 031107 (2008); doi:10.1063/1.2963980

Published 23 July 2008

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Darin Hoffman,1 Binh-Minh Nguyen,1 Edward Kwei-wei Huang,1 Pierre-Yves Delaunay,1 Manijeh Razeghi,1 Meimei Z. Tidrow,2 and Joe Pellegrino3
1Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
2Missile Defense Agency, 7100 Defense Pentagon, Washington, DC 20301, USA
3Night Vision and Electronic Sensors Directorate, Fort Belvoir, Virginia 22060, USA

A variation on the standard homodiode type-II superlattice with an M-barrier between the pi-region and the n-region is shown to suppress the dark currents. By determining the optimal doping level of the M-superlattice, dark current densities of 4.95  mA/cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50  mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11×1010  cm  sqrt(Hz)/W at 77  K for 14.58  µm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes. ©2008 American Institute of Physics
History: Received 19 June 2008; accepted 3 July 2008; published 23 July 2008
Permalink: http://link.aip.org/link/?APPLAB/93/031107/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.60.Dw
    Photodiodes; phototransistors; photoresistors
  • 85.40.Ry
    Impurity doping, diffusion and ion implantation technology (microelectronics)
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (10)

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