The effect of doping the M-barrier in very long-wave type-II InAs/GaSb heterodiodes
Appl. Phys. Lett. 93, 031107 (2008); doi:10.1063/1.2963980
Published 23 July 2008
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A variation on the standard homodiode type-II superlattice with an M-barrier between the
-region and the n-region is shown to suppress the dark currents. By determining the optimal doping level of the M-superlattice, dark current densities of 4.95 mA/cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11×1010 cm
/W at 77 K for 14.58 µm cutoff wavelength for large area diodes without passivation. This is comparable to values for the state-of-the-art HgCdTe photodiodes.
©2008 American Institute of Physics
-region and the n-region is shown to suppress the dark currents. By determining the optimal doping level of the M-superlattice, dark current densities of 4.95 mA/cm2 and quantum efficiencies in excess of 20% have been demonstrated at the moderate reverse bias of 50 mV; allowing for near background-limted performance with a Johnson-noise detectivity of 3.11×1010 cm | History: | Received 19 June 2008; accepted 3 July 2008; published 23 July 2008 |
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0003-6951 (print)
1077-3118 (online)
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