Bias-controlled spin polarization in quantum wires
We demonstrate that a source-drain bias creates a fully spin-polarized current as the 0.25(2e2/h) plateau in quantum wires even in zero magnetic field. When a source-drain bias lifts the momentum dege...
We demonstrate that a source-drain bias creates a fully spin-polarized current as the 0.25(2e2/h) plateau in quantum wires even in zero magnetic field. When a source-drain bias lifts the momentum dege...
Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation
We have fabricated GeO2/Ge metal-oxide-semiconductor (MOS) structures by direct thermal oxidation of Ge substrates. The interface trap density (Dit) of Al/GeO2/Ge MOS structures, measured by the low t...
We have fabricated GeO2/Ge metal-oxide-semiconductor (MOS) structures by direct thermal oxidation of Ge substrates. The interface trap density (Dit) of Al/GeO2/Ge MOS structures, measured by the low t...
Highly stable amorphous-silicon thin-film transistors on clear plastic
Appl. Phys. Lett. 93, 032103 (2008); doi:10.1063/1.2963481
Published 23 July 2008
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Hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) have been fabricated on clear plastic with highly stable threshold voltages. When operated at a gate field of 2.5×105 V/cm, the threshold voltage shift extrapolated to only ~1.2 V after ten years. This stability is achieved by a high deposition temperature for the gate silicon nitride insulator which reduces charge trapping and high hydrogen dilution during a-Si:H growth to reduce defect creation in a-Si:H. This gate field of 2.5×105 V/cm is sufficient to drive phosphorescent organic light emitting diodes (OLEDs) at a brightness of 1000 Cd/m2. The half-life of the TFT current is over ten years, slightly longer than the luminescence half-life of high quality green OLEDs.
©2008 American Institute of Physics
| History: | Received 8 April 2008; accepted 27 June 2008; published 23 July 2008 |
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