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Isotope disorder of phonons in GaN and its beneficial effect on high power field effect transistors

Appl. Phys. Lett. 93, 032110 (2008); doi:10.1063/1.2961120

Published 23 July 2008

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Jacob B. Khurgin,1 Debdeep Jena,2 and Yujie J. Ding3
1Department of ECE, Johns Hopkins University, Baltimore, Maryland 21218, USA
2Department of EE, University of Notre Dame, Notre Dame, Indiana 46556, USA
3Department of ECE, Lehigh University, Bethlehem, Pennsylvania 18015, USA
We analyze the influence of isotope disorder on longitudinal optical (LO) phonon modes in GaN and then study the scattering by disordered LO phonons in the channel of high power transistor. Results indicate that as a larger number of LO phonons gets excited, a more efficient cooling of electrons can be accomplished and most of the spurious hot phonon effects can be mitigated leading to significant improvement in the saturation velocity. To the best of our knowledge this is the first ever example of disorder playing constructive role in the performance of room-temperature electronic devices. ©2008 American Institute of Physics
History: Received 10 June 2008; accepted 1 July 2008; published 23 July 2008
Permalink: http://link.aip.org/link/?APPLAB/93/032110/1
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KEYWORDS and PACS

Keywords
PACS
  • 85.30.Tv
    Semiconductor field effect devices
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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