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Stokes and anti-Stokes resonant Raman scatterings from biased GaN/AlN heterostructure

Appl. Phys. Lett. 93, 051912 (2008); doi:10.1063/1.2967337

Published 8 August 2008

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Guibao Xu,1 Suvranta K. Tripathy,1 Xiaodong Mu,1 Yujie J. Ding,1 Kejia Wang,2 Yu Cao,2 Debdeep Jena,2 and Jacob B. Khurgin3
1Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015, USA
2Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
3Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218, USA
An electric field present in a GaN/AlN heterostructure can bring both the first-order and second-order Raman scattering processes into strong resonances. The resonant Stokes and anti-Stokes Raman scatterings result in the increase and decrease in nonequilibrium longitudinal-optical phonon temperatures, respectively. Moreover, the phonon temperature measured from the Raman scattering is increased with an applied electric field at a much higher rate than the lattice temperature due to the presence of field-induced nonequilibrium longitudinal-optical phonons. ©2008 American Institute of Physics
History: Received 8 June 2008; accepted 13 July 2008; published 8 August 2008
Permalink: http://link.aip.org/link/?APPLAB/93/051912/1
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KEYWORDS and PACS

Keywords
PACS
  • 78.30.Fs
    Infrared and Raman spectra in III-V and II-VI semiconductors
  • 63.20.-e
    Phonons in crystal lattices
  • YEAR: 2008

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0003-6951 (print)   1077-3118 (online)
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