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High thermoelectric efficiency in lanthanum doped Yb14MnSb11

Appl. Phys. Lett. 93, 062110 (2008); doi:10.1063/1.2970089

Published 15 August 2008

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Eric S. Toberer,1 Shawna R. Brown,2 Teruyuki Ikeda,1 Susan M. Kauzlarich,2 and G. Jeffrey Snyder1
1Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125, USA
2Department of Chemistry, University of California, One Shields Ave., Davis, California 95616, USA
Lanthanum doping of the high-temperature p-type thermoelectric material Yb14MnSb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6La0.4MnSb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14Mn1−xAlxSb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14MnSb11-based materials. ©2008 American Institute of Physics
History: Received 23 June 2008; accepted 24 July 2008; published 15 August 2008
Permalink: http://link.aip.org/link/?APPLAB/93/062110/1
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KEYWORDS and PACS

Keywords
PACS
  • 72.15.Jf
    Thermoelectric and thermomagnetic effects (metals/alloys)
  • 61.72.up
    Doping and impurity implantation in other materials
  • 61.66.Dk
    Crystal structure of specific alloys
  • 72.15.Gd
    Galvanomagnetic and other magnetotransport effects (metals/alloys)
  • 72.15.Eb
    Electrical and thermal conduction in crystalline metals and alloys
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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