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A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN

Appl. Phys. Lett. 93, 081111 (2008); doi:10.1063/1.2975165

Published 27 August 2008

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C. Bayram,1 F. Hosseini Teherani,2 D. J. Rogers,2 and M. Razeghi1
1Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, USA
2Nanovation SARL, 103 bis Rue de Versailles, Orsay 91400, France
Hybrid green light-emitting diodes (LEDs) comprised of n-ZnO/(InGaN/GaN) multi-quantum-wells/p-GaN were grown on semi-insulating AlN/sapphire using pulsed laser deposition for the n-ZnO and metal organic chemical vapor deposition for the other layers. X-ray diffraction revealed that high crystallographic quality was preserved after the n-ZnO growth. LEDs showed a turn-on voltage of 2.5 V and a room temperature electroluminescence (EL) centered at 510 nm. A blueshift and narrowing of the EL peak with increasing current was attributed to bandgap renormalization. The results indicate that hybrid LED structures could hold the prospect for the development of green LEDs with superior performance. ©2008 American Institute of Physics
History: Received 5 June 2008; accepted 2 August 2008; published 27 August 2008
Permalink: http://link.aip.org/link/?APPLAB/93/081111/1
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REFERENCES (19)
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  1. C. J. Humphreys, MRS Bull. 33, 459 (2008).
  2. N. F. Gardner, G. O. Muller, Y. C. Shen, G. Chen, S. Watanabe, W. Gotz, and M. R. Krames, Appl. Phys. Lett. 91, 243506 (2007).
  3. Y. H. Cho, S. K. Lee, H. S. Kwack, J. Y. Kim, K. S. Lim, H. M. Kim, T. W. Kang, S. N. Lee, M. S. Seon, O. H. Nam, and Y. J. Park, Appl. Phys. Lett. 83, 2578 (2003).
  4. I. K. Park, M. K. Kwon, J. O. Kim, S. B. Seo, J. Y. Kim, J. H. Lim, S. J. Park, and Y. S. Kim, Appl. Phys. Lett. 91, 133105 (2007).
  5. I. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996).
  6. B. Daele, G. Van Tendeloo, K. Jacobs, I. Moerman, and M. R. Leys, Appl. Phys. Lett. 85, 4379 (2004).
  7. D. J. Rogers, F. H. Teherani, A. Yasan, R. McClintock, K. Mayes, S. R. Darvish, P. Kung, M. Razeghi, and G. Garry, Proc. SPIE 5732, 412 (2005).
  8. S. J. An, J. H. Chae, G. C. Yi, and G. H. Park, Appl. Phys. Lett. 92, 121108 (2008).
  9. Ya. I. Alivov, J. E. Van Nostrand, and D. C. Look, Appl. Phys. Lett. 83, 2943 (2003).
  10. D. J. Rogers, F. H. Teherani, A. Yasan, K. Minder, P. Kung, and M. Razeghi, Appl. Phys. Lett. 88, 141918 (2006).
  11. D. J. Rogers, F. H. Teherani, P. Kung, K. Minder, and M. Razeghi, Superlattices Microstruct. 42, 322 (2007).
  12. M. Smith, G. D. Chen, J. Y. Lin, H. X. Jiang, A. Salvador, B. N. Sverdlov, A. Botchkarev, H. Morkoc, and B. Goldenberg, Appl. Phys. Lett. 68, 1883 (1996).
  13. E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, Cambridge, England, 2003).
  14. D. S. Li, H. Chen, H. B. Yu, H. Q. Jia, Q. Huang, and J. M. Zhou, J. Appl. Phys. 96, 1111 (2004).
  15. D. V. Kuksenkov, H. Temkin, A. Osinsky, R. Gaska, and M. A. Khan, Appl. Phys. Lett. 72, 1365 (1998).
  16. M. S. Ferdous, X. Wang, M. N. Fairchild, and S. D. Hersee, Appl. Phys. Lett. 91, 231107 (2007).
  17. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).
  18. T. Takeuchi, C. Wetzel, S. Yamaguchi, H. Sakai, H. Amano, and I. Akasaki, Appl. Phys. Lett. 73, 1691 (1998).
  19. Y. D. Qi, H. Liang, D. Wang, Z. D. Lu, W. Tang, and K. M. Lau, Appl. Phys. Lett. 86, 101903 (2005).

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