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Resonant coherent Bragg rod analysis of strained epitaxial heterostructures

Appl. Phys. Lett. 93, 081910 (2008); doi:10.1063/1.2975835

Published 26 August 2008

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D. P. Kumah,1 A. Riposan,1 C. N. Cionca,1 N. S. Husseini,1 R. Clarke,1 J. Y. Lee,2 J. M. Millunchick,2 Y. Yacoby,3 C. M. Schlepütz,4 M. Björck,4 and P. R. Willmott4
1Applied Physics Program, Physics Department, University of Michigan, Ann Arbor, Michigan 48109, USA
2Materials Science and Engineering Department, University of Michigan, Ann Arbor, Michigan 48109, USA
3Racah Institute of Physics, Hebrew University, Jerusalem 91904, Israel
4Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
The resonant response of the complex x-ray scattering factor has been used in conjunction with the coherent Bragg rod analysis phase-retrieval algorithm to determine the composition and strain profiles of ultrathin layers of GaAs grown on InGaAs buffers. The buffer layers are nominally latticed matched with the InP substrate and the subsequent GaAs growth is compared at two different temperatures: 480 and 520  °C. We show that electron density maps extracted from Bragg rod scans measured close to the Ga and As K-edges can be used to deconvolute roughness and intermixing. It is found that indium incorporation and roughening lead to a significant reduction of the strain in this system. ©2008 American Institute of Physics
History: Received 27 June 2008; accepted 4 August 2008; published 26 August 2008
Permalink: http://link.aip.org/link/?APPLAB/93/081910/1
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KEYWORDS and PACS

Keywords
PACS
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 68.55.J-
    Thin film morphology
  • 78.70.Ck
    X-ray scattering (condensed matter)
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (14)
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