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X-ray photoelectron spectroscopy energy band alignment of spin-on CoTiO3 high-k dielectric prepared by sol-gel spin coating method

Appl. Phys. Lett. 93, 092907 (2008); doi:10.1063/1.2978231

Published 5 September 2008

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Kuo-Hsing Kao,1 Shiow-Huey Chuang,2 Woei-Cherng Wu,1 Tien-Sheng Chao,1 Jian-Hao Chen,3 Ming-Wen Ma,3 Reui-Hong Gao,4 and Michael Y. Chiang4
1Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 30010, Taiwan, Republic of China
2Department of Applied Chemistry, National University of Kaohsiung, Kaohsiung, Taiwan 81148, Republic of China
3Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 30010, Taiwan, Republic of China
4Department of Chemistry, National Sun Yat-sen University, Kaoshiung, Taiwan 80424, Republic of China
The characteristics of CoTiO3 high-k dielectric prepared by sol-gel spin coating method had been demonstrated. High electrical permittivity (k~40.2) of CoTiO3 dielectric was extracted via the transmission electron microscopy image and capacitance-voltage curves. In addition, the valence band offset between thermal SiO2 and spin-on CoTiO3 was about 4.0 eV, which was detected by x-ray photoelectron spectroscopy. The band gaps of thermal SiO2 and spin-on CoTiO3 were 9.0 and 2.2 eV, respectively. Energy band alignment of spin-on CoTiO3 directly with SiO2 and indirectly with Si was determined in this work. ©2008 American Institute of Physics
History: Received 20 April 2008; accepted 14 August 2008; published 5 September 2008
Permalink: http://link.aip.org/link/?APPLAB/93/092907/1
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KEYWORDS and PACS

Keywords
PACS
  • 77.55.+f
    Dielectric thin films
  • 77.22.Ch
    Permittivity (dielectric function)
  • 81.20.Fw
    Sol-gel processing, precipitation
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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REFERENCES (13)
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