In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN:H heterostructures
GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite diff...
GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN:H regions show a quite diff...
A study of multirow-per-track bit patterned media by spinstand testing and magnetic force microscopy
We propose and demonstrate a concept of multirow-per-track bit patterned media (BPM) recording to overcome the problems encountered with the conventional one-row-per-track design. Focused ion beam was...
We propose and demonstrate a concept of multirow-per-track bit patterned media (BPM) recording to overcome the problems encountered with the conventional one-row-per-track design. Focused ion beam was...
Two dimensionally patterned GaNxAs1−x/GaAs nanostructures using N+ implantation followed by pulsed laser melting
Appl. Phys. Lett. 93, 102117 (2008); doi:10.1063/1.2982424
Published 12 September 2008
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We present measurements on two dimensionally patterned GaNxAs1−x dots fabricated in a GaAs matrix using ion implantation followed by pulsed laser melting and rapid thermal annealing. The lithographically patterned GaNxAs1−x regions are imaged by ballistic electron emission microscopy (BEEM). By analyzing the BEEM spectra of the locally confined dots, we observe the decrease in the Schottky barrier height with nitrogen incorporation. The second derivatives of BEEM currents from unpatterned GaNxAs1−x films exhibit a decrease in 
-like thresholds as the nitrogen concentration increases. The composition dependence of the thresholds agrees well with that of previously studied low temperature molecular beam epitaxy grown alloys.
©2008 American Institute of Physics
-like thresholds as the nitrogen concentration increases. The composition dependence of the thresholds agrees well with that of previously studied low temperature molecular beam epitaxy grown alloys.
©2008 American Institute of Physics
| History: | Received 16 July 2008; accepted 26 August 2008; published 12 September 2008 |
| Permalink: |
http://link.aip.org/link/?APPLAB/93/102117/1 |
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BibSonomy
KEYWORDS and PACS
annealing,
field emission electron microscopy,
gallium arsenide,
gallium compounds,
III-V semiconductors,
ion implantation,
melting,
nanolithography,
nanopatterning,
nanostructured materials,
pulsed laser deposition,
Schottky barriers,
semiconductor thin films
- 61.80.Jh
Ion radiation effects - 68.55.Ln
Thin film defects and impurities - 81.15.Fg
Laser deposition - 81.16.Mk
Laser-assisted deposition in nanofabrication and processing - 81.16.Nd
Nanolithography in nanofabrication and processing - 81.16.Rf
Nanoscale pattern formation in nanofabrication and processing - YEAR: 2008
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
AIP
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