Visualization and investigation of Si–C covalent bonding of single carbon nanotube grown on silicon substrate
Appl. Phys. Lett. 93, 103111 (2008); doi:10.1063/1.2980402
Published 11 September 2008
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It has been predicted that the electronic properties of carbon nanotubes (CNTs) can be dramatically tuned by forming Si–C bonds with a silicon surface. Thus, the realization of Si–C bonds will broaden future applications of CNTs on nanodevices. In this paper, we use micro-Raman imaging and spectroscopy to investigate the interaction between individual CNTs and silicon substrate. We show that covalent bonds were formed between certain CNTs and the substrate, and visualized such Si-CNT bonds using micro-Raman imaging. Polarized Raman results further reveal that the Si–C bonds are arranged orderly along the long axis of the Si-CNT. We thus show that Raman imaging is a very useful technique to study properties of such Si-CNTs.
©2008 American Institute of Physics
| History: | Received 3 June 2008; accepted 18 August 2008; published 11 September 2008 |
| Permalink: |
http://link.aip.org/link/?APPLAB/93/103111/1 |
KEYWORDS and PACS
- 81.07.De
Nanotubes: fabrication and characterization - 81.05.Tp
Fullerenes and related materials; fabrication, treatment, testing and analysis - 61.48.De
Structure of carbon nanotubes, boron nanotubes and closely related graphite-like systems - 78.30.Na
Infrared and Raman spectra in fullerenes and related materials - 73.22.-f
Electronic structure of nanoscale materials - YEAR: 2008
RELATED DATABASES
PUBLICATION DATA
0003-6951 (print)
1077-3118 (online)
REFERENCES (22)
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- S. Iijima,
Nature (London) 354, 56 (1991) . - S. J. Tans, M. H. Devoret, H. J. Dai, A. Thess, R. E. Smalley, L. J. Geerligs, and C. Dekker,
Nature (London) 386, 474 (1997) . - Y. W. Zhu, F. C. Cheong, T. Yu, X. J. Xu, C. T. Lim, J. T. L. Thong, Z. X. Shen, C. K. Ong, Y. J. Liu, A. T. S. Wee, and C. H. Sow,
Carbon 43, 395 (2005) . - R. Saito, M. Fujita, G. Dresselhaus, and M. S. Dresselhaus, Appl. Phys. Lett. 60, 2204 (1992).
- M. Bockrath, J. Hone, A. Zettl, P. L. McEuen, A. G. Rinzler, and R. E. Smalley, Phys. Rev. B 61, R10606 (2000).
- Z. Yao, H. W. C. Postma, L. Balents, and C. Dekker,
Nature (London) 402, 273 (1999) . - P. M. Albrecht and J. W. Lyding,
Nanotechnology 18, 125302 (2007) . - R. H. Miwa, W. Orellana, and A. Fazzio, Appl. Phys. Lett. 86, 213111 (2005).
- F. D. Mota and C. M. C. de Castilho, Phys. Rev. B 74, 165408 (2006).
- G. W. Peng, A. C. H. Huan, L. Liu, and Y. P. Feng, Phys. Rev. B 74, 235416 (2006).
- A. Mews, F. Koberling, T. Basche, G. Philipp, G. S. Duesberg, S. Roth, and M. Burghard,
Adv. Mater. (Weinheim, Ger.) 12, 1210 (2000) . - H. Hiura, T. W. Ebbesen, K. Tanigaki, and H. Takahashi,
Chem. Phys. Lett. 202, 509 (1993) . - M. Oron-Carl, F. Hennrich, M. M. Kappes, H. V. Lohneysen, and R. Krupke, Arch. Hist. Exact Sci. 5, 1761 (2005).
- S. D. M. Brown, P. Corio, A. Marucci, M. A. Pimenta, M. S. Dresselhaus, and G. Dresselhaus, Phys. Rev. B 61, 7734 (2000).
- J. Maultzsch, S. Reich, U. Schlecht, and C. Thomsen, Phys. Rev. Lett. 91, 087402 (2003).
- C. Jiang, K. Kempa, J. Zhao, U. Schlecht, U. Kolb, T. Basch, M. Burghard, and A. Mews, Phys. Rev. B 66, 161404 (2002).
- S. D. M. Brown, P. Corio, A. Marucci, M. S. Dresselhaus, M. A. Pimenta, and K. Kneipp, Phys. Rev. B 61, R5137 (2000).
- D. Olego and M. Cardona, Phys. Rev. B 25, 1151 (1982).
- J. C. Burton, L. Sun, F. H. Long, Z. C. Feng, and I. T. Ferguson, Phys. Rev. B 59, 7282 (1999).
- W. Windl, K. Karch, P. Pavone, O. Schutt, D. Strauch, W. H. Weber, K. C. Hass, and L. Rimai, Phys. Rev. B 49, 8764 (1994).
- J. Frechette and C. Carraro,
J. Am. Chem. Soc. 128, 14774 (2006) . - G. S. Duesberg, I. Loa, M. Burghard, K. Syassen, and S. Roth, Phys. Rev. Lett. 85, 5436 (2000).







