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Visualization and investigation of Si–C covalent bonding of single carbon nanotube grown on silicon substrate

Appl. Phys. Lett. 93, 103111 (2008); doi:10.1063/1.2980402

Published 11 September 2008

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YuMeng You,1 Ting Yu,1 Johnson Kasim,1 Hang Song,2 XiaoFeng Fan,1 ZhenHua Ni,1 LianZhen Cao,2 Hong Jiang,2 DeZhen Shen,2 JerLai Kuo,1 and ZeXiang Shen1
1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 1 Nanyang Walk, Block 5, Level 3, Singapore 637616, Singapore
2Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, People's Republic of China

It has been predicted that the electronic properties of carbon nanotubes (CNTs) can be dramatically tuned by forming Si–C bonds with a silicon surface. Thus, the realization of Si–C bonds will broaden future applications of CNTs on nanodevices. In this paper, we use micro-Raman imaging and spectroscopy to investigate the interaction between individual CNTs and silicon substrate. We show that covalent bonds were formed between certain CNTs and the substrate, and visualized such Si-CNT bonds using micro-Raman imaging. Polarized Raman results further reveal that the Si–C bonds are arranged orderly along the long axis of the Si-CNT. We thus show that Raman imaging is a very useful technique to study properties of such Si-CNTs. ©2008 American Institute of Physics
History: Received 3 June 2008; accepted 18 August 2008; published 11 September 2008
Permalink: http://link.aip.org/link/?APPLAB/93/103111/1
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KEYWORDS and PACS

Keywords
PACS
  • 81.07.De
    Nanotubes: fabrication and characterization
  • 81.05.Tp
    Fullerenes and related materials; fabrication, treatment, testing and analysis
  • 61.48.De
    Structure of carbon nanotubes, boron nanotubes and closely related graphite-like systems
  • 78.30.Na
    Infrared and Raman spectra in fullerenes and related materials
  • 73.22.-f
    Electronic structure of nanoscale materials
  • YEAR: 2008

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ISSN:
0003-6951 (print)   1077-3118 (online)
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