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Zener tunneling in semiconducting nanotube and graphene nanoribbon p−n junctions

Appl. Phys. Lett. 93, 112106 (2008); doi:10.1063/1.2983744

Published 16 September 2008

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Debdeep Jena, Tian Fang, Qin Zhang, and Huili Xing
Department of Electrical Engineering, University of Notre Dame, Indiana 46556, USA
A theory is developed for interband tunneling in semiconducting carbon nanotube and graphene nanoribbon p−n junction diodes. Characteristic length and energy scales that dictate the tunneling probabilities and currents are evaluated. By comparing the Zener tunneling processes in these structures to traditional Group IV and III–V semiconductors, it is proved that for identical bandgaps, carbon-based one-dimensional (1D) structures have higher tunneling currents. The high tunneling current magnitudes for 1D carbon structures suggest the distinct feasibility of high-performance tunneling-based field-effect transistors. ©2008 American Institute of Physics
History: Received 3 June 2008; accepted 27 August 2008; published 16 September 2008
Permalink: http://link.aip.org/link/?APPLAB/93/112106/1
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KEYWORDS and PACS

Keywords
PACS
  • 73.40.Gk
    Tunneling (electronic transport)
  • 73.40.Kp
    Electrical properties of III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
  • 72.20.Ht
    High-field transport and nonlinear effects (semiconductors/insulators)
  • 61.46.Fg
    Structure of nanotubes
  • 85.30.Tv
    Semiconductor field effect devices
  • 85.35.Kt
    Nanotube devices
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
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REFERENCES (16)
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