Applied Physics Letters
Feedback | Help | Exit
Applied Physics Letters
   
 
 
 
Previous Article
Optical properties of columnar InAs quantum dots on InP for semiconductor optical amplifiers
Optical properties of polarization-controlled columnar quantum dots (QDs) grown by metalorganic vapor-phase epitaxy for semiconductor optical amplifier (SOA) applications are reported. The photolumine...
Next Article
Observation of coupled-cavity structures in metamaterials
In this letter, we investigated the transmission properties of metamaterial based coupled-cavity structures. We first calculated the effective parameters of a split-ring resonator (SRR) and composite ...

Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

Appl. Phys. Lett. 93, 121909 (2008); doi:10.1063/1.2990622

Published 24 September 2008

You are not logged in to this journal. Log in

James M. LeBeau, Qi O. Hu, Christopher J. Palmstrøm, and Susanne Stemmer
Materials Department, University of California, Santa Barbara, California 93106-5050, USA
The interfacial atomic structure of epitaxial Fe films grown by molecular beam epitaxy on c(4×4) reconstructed (001) GaAs was investigated using high-angle annular dark-field imaging in scanning transmission electron microscopy. No extended interfacial reaction phase is observed and the image contrast is discussed in terms of the interface atomic configuration. The images show an As-terminated semiconductor. The interface consists of a single partially occupied plane inserted between the Fe film and the GaAs, which most likely is occupied by Fe. This interface structure provides strong evidence for preferential Fe–As bonding across the interface. ©2008 American Institute of Physics
History: Received 6 July 2008; accepted 5 September 2008; published 24 September 2008
Permalink: http://link.aip.org/link/?APPLAB/93/121909/1
BUY THIS ARTICLE   (US$28)
Download HTML Download Sectioned HTML Download PDF (309 kB) View Cart

KEYWORDS and PACS

Keywords
PACS
  • 68.35.Ct
    Solid-solid interface structure and roughness
  • 68.55.ag
    Semiconductor thin film nucleation and growth
  • 81.15.Hi
    Molecular, atomic, ion, and chemical beam epitaxy
  • 68.37.Hk
    Scanning electron microscopy (SEM) of surfaces, interfaces and thin films
  • 68.37.Lp
    Transmission electron microscopy (TEM) of surfaces, interfaces and thin films
  • 81.40.Gh
    Other heat and thermomechanical treatments
  • YEAR: 2008

RELATED DATABASES


To view database links for this article,
you need to log in.
To view database links for this article,
you need to log in.

PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
Publisher:
AIP is a member of CrossRef AIP

REFERENCES (16)
View in Separate Window/Tab
For access to fully linked references, you need to log in. For access to fully linked references, you need to Log in.
  1. G. Wastlbauer and J. A. C. Bland, Adv. Phys. 54, 137 (2005).
  2. G. Kirczenow, Phys. Rev. B 63, 054422 (2001).
  3. S. Mirbt, B. Sanyal, C. Isheden, and B. Johansson, Phys. Rev. B 67, 155421 (2003).
  4. C. Adelmann, J. Q. Xie, C. J. Palmstrøm, J. Strand, X. Lou, J. Wang, and P. A. Crowell, J. Vac. Sci. Technol. B 23, 1747 (2005).
  5. C. Adelmann, B. D. Schultz, J. Strand, X. Lou, X. Y. Dong, J. Q. Xie, S. Park, M. R. Fitzsimmons, P. A. Crowell, and C. J. Palmstrøm, Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials (16th IPRM), 2004, p. 505.
  6. A. Ionescu, M. Tselepi, D. M. Gillingham, G. Wastlbauer, S. J. Steinmuller, H. E. Beere, D. A. Ritchie, and J. A. C. Bland, Phys. Rev. B 72, 125404 (2005).
  7. P. M. Thibado, E. Kneedler, B. T. Jonker, B. R. Bennett, B. V. Shanabrook, and L. J. Whitman, Phys. Rev. B 53, R10481 (1996).
  8. B. D. Schultz, H. H. Farrell, M. M. R. Evans, K. Ludge, and C. J. Palmstrom, J. Vac. Sci. Technol. B 20, 1600 (2002).
  9. M. W. Ruckman, J. J. Joyce, and J. H. Weaver, Phys. Rev. B 33, 7029 (1986).
  10. B. D. Schultz, C. Adelmann, X. Lou, J. Strand, P. A. Crowell, N. Marom, D. Naveh, L. Kronik, and C. J. Palmstrøm (unpublished).
  11. T. J. Zega, A. T. Hanbicki, S. C. Erwin, I. Zutic, G. Kioseoglou, C. H. Li, B. T. Jonker, and R. M. Stroud, Phys. Rev. Lett. 96, 196101 (2006).
  12. S. C. Erwin, S. -H. Lee, and M. Scheffler, Phys. Rev. B 65, 205422 (2002).
  13. D. O. Demchenko and A. Y. Liu, Phys. Rev. B 73, 115332 (2006).
  14. C. Adelmann, X. Lou, J. Strand, C. J. Palmstrom, and P. A. Crowell, Phys. Rev. B 71, 121301 (2005).
  15. A. Ohtake, Surf. Sci. Rep. 63, 295 (2008).
  16. B. D. Schultz, C. Adelmann, X. Y. Dong, S. McKernan, and C. J. Palmstrøm, Appl. Phys. Lett. 92, 091914 (2008).

CITING ARTICLES
For access to citing articles, you need to log in.
For access to citing articles, you need to Log in.


Copyright © American Institute of Physics