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Dislocation density reduction in multicrystalline silicon solar cell material by high temperature annealing

Appl. Phys. Lett. 93, 122108 (2008); doi:10.1063/1.2990644

Published 25 September 2008

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Katy Hartman,1 Mariana Bertoni,2 James Serdy,2 and Tonio Buonassisi2
1Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
2Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
We propose and demonstrate a method to remove performance-limiting dislocations from multicrystalline silicon (mc-Si) solar cell material, appropriate for wafers or bricks. Dislocation density reductions of >95% are achieved in commercial mc-Si via high temperature annealing with an impurity diffusion barrier, with controlled ambient and time-temperature profiles. The dislocation density reduction follows temperature-dependent models developed by Kuhlmann [Proc. Phys. Soc., London, Sect. A 64, 140 (1951)] and Nes [Acta Metall. Mater. 43, 2189 (1995)]. It is believed that higher annealing temperatures (>1170 °C) allow dislocation movement unconstrained by crystallographic glide planes, leading to dislocation annihilation within minutes. ©2008 American Institute of Physics
History: Received 9 June 2008; accepted 3 September 2008; published 25 September 2008
Permalink: http://link.aip.org/link/?APPLAB/93/122108/1

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KEYWORDS and PACS

Keywords
PACS
  • 84.60.Jt
    Photoelectric conversion: solar cells and arrays
  • 61.72.Cc
    Kinetics of defect formation and annealing
  • 68.35.Fx
    Diffusion; interface formation (solid surfaces)
  • 61.72.Hh
    Indirect evidence of dislocations and other defects
  • YEAR: 2008

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PUBLICATION DATA

ISSN:
0003-6951 (print)   1077-3118 (online)
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